Mo Substrate Cleaning Composition for Residue Removal Without Roughening

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Solution Overview

Problem

Current cleaning compositions for semiconductor substrates, particularly those containing molybdenum (Mo), are inadequate in removing Mo-based residues and can cause surface roughness, necessitating an improvement in removability and corrosion suppression.

Innovation Solution

A cleaning composition comprising organic acids and organic amine compounds, specifically including primary, secondary, and tertiary amino groups, with a pH range of 2 to 9, which effectively dissolves Mo-based residues and suppresses surface roughness by adjusting the interaction with the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional cleaning compositions are used on Mo-containing substrates, then general cleaning function is provided, but removability of Mo-based residues is insufficient and surface roughness occurs

Engineering Contradiction:
Improvesurface qualityVSAvoidremovability of Mo-based residues
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical parameters of the cleaning composition by incorporating specific organic acids (formic acid, acetic acid, propionic acid, or butyric acid) and organic amine compounds with primary, secondary, or tertiary amino groups. This parameter change enables the composition to effectively remove Mo-based residues while suppressing surface roughness, resolving the contradiction between removability and surface quality.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite cleaning composition by combining organic acids with organic amine compounds in specific ratios (mass ratio of organic acid to organic amine compound: 1:0.1 to 1:10). This composite formulation synergistically enhances both the removability of Mo-based residues and the suppression of surface roughness, simultaneously improving reliability and manufacturing precision.

Inventive Principle:
Principle #40Composite materials

2Reliability

If cleaning composition interacts with Mo-containing substrate, then Mo-based residues are removed, but corrosion and surface roughness occur

Engineering Contradiction:
Improveremovability of residuesVSAvoidcorrosion and surface roughness
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent adjusts the pH parameter of the cleaning composition to within the range of 1 to 14 by selecting appropriate organic acids and organic amine compounds. This parameter optimization allows effective residue removal while controlling the aggressiveness of the composition, thereby suppressing corrosion and surface roughness of the Mo-containing substrate.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The organic amine compounds act as intermediary substances that mediate between the organic acid and the Mo-containing substrate. These compounds facilitate the removal of Mo-based residues through chelation and complex formation, while simultaneously protecting the substrate from excessive corrosion and surface roughness by controlling the interaction intensity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves excellent removability of Mo-based residues and prevents surface roughness on Mo-containing substrates, enhancing the manufacturing process of semiconductor substrates by ensuring improved substrate quality.

Implementation Method 1

effectively dissolves Mo-based residues

Methodology Applied
Scientific EffectChemical dissolution: Solvation

Implementation Method 2

suppresses surface roughness by adjusting the interaction with the substrate

Methodology Applied
Scientific EffectCorrosion suppression:

Data Source

PatentUS20250019623A1Cleaning composition and method for manufacturing semiconductor substrate
Publication Date: 2025.01.16 FUJIFILM CORP
  • US20250019623A1 patent drawing
  • US20250019623A1 patent drawing
  • US20250019623A1 patent drawing

AI summary

An object of the present invention is to provide a cleaning composition that suppresses a surface roughness of a region including Mo and has excellent removability of Mo-based residues in a case of being used in a treatment of an Mo-containing substrate. The cleaning composition of an embodiment of the present invention is a cleaning composition used in a treatment of a molybdenum-containing substrate, the cleaning composition including an organic acid and organic amine compounds having at least one group selected from the group consisting of a primary amino group, a secondary amino group, and a tertiary amino group, in which the cleaning composition includes two or more kinds of the organic amine compounds.