Mo-Nb Alloy Electrode Taper Angle Control for Leak Current Suppression
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Solution Overview
Problem
Existing electronic devices with Mo electrodes face challenges in suppressing leak current due to difficulties in adjusting the taper angle of the edge cross section and maintaining insulating film coverage, leading to cavities and cracks, which complicates manufacturing processes.
Innovation Solution
The use of an Mo-Nb alloy for the first electrode, which allows for the adjustment of the taper angle to suppress leak current, combined with a sputtering method for forming the insulating film, effectively reducing leak current without requiring a two-layer insulating film configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If Mo is used as the first electrode material to ensure adhesion with the insulating film, then adhesion is improved, but the taper angle cannot be adjusted to suppress leak current and insulating film coverage deteriorates
Solution Approach 1:
The patent employs a composite material structure consisting of a Mo-Nb alloy layer combined with a Mo layer. The Mo-Nb alloy layer provides the necessary adhesion to the insulating film, while the Mo layer enables proper taper angle formation. This composite structure resolves the contradiction by combining materials with complementary properties - the alloy ensures strong adhesion while the pure Mo layer facilitates appropriate edge geometry for leak current suppression.
Solution Approach 2:
The patent applies local quality by having different regions of the first electrode with different material compositions. The Mo-Nb alloy layer is positioned where adhesion to the insulating film is critical, while the Mo layer extends to the edges where taper angle control is essential. This spatial differentiation of material properties allows simultaneous optimization of both adhesion and leak current suppression.
2Reliability
If the taper angle of the first electrode edge cross section is reduced to suppress leak current, then leak current is suppressed, but insulating film coverage deteriorates with Mo material
Solution Approach 1:
The composite structure of Mo-Nb alloy and Mo layers resolves this contradiction by assigning different functional roles to each material. The Mo-Nb alloy layer maintains proper coverage with the insulating film due to its material properties, while the Mo layer forms the edge structure with appropriate taper angle. This allows the insulating film to properly cover the electrode structure while still achieving the small taper angle needed for leak current suppression.
3Reliability
If a two-layer insulating film configuration is used to suppress leak current, then leak current is suppressed, but device complexity increases
Solution Approach 1:
Instead of copying the conventional approach of using a two-layer insulating film structure, the patent copies the functional effect of leak current suppression by using a Mo-Nb alloy material system. This achieves the same reliability improvement through material composition rather than structural complexity, thereby avoiding the increased device complexity that would result from additional insulating film layers.
Solution Approach 2:
The patent changes the material parameter (composition) of the first electrode from pure Mo to Mo-Nb alloy. This parameter change fundamentally alters the electrode's properties, enabling both proper adhesion and appropriate taper angle formation with a single-layer insulating film, thus achieving leak current suppression without increasing insulating film layer complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Mo-Nb alloy enables a significant reduction in leak current by adjusting the taper angle to less than 50°, improving adhesion and reducing membrane stress, while maintaining electrical conductivity, thus enhancing the reliability and simplicity of the electronic device production process.
Implementation Method 1
forming an insulating film, that covers at least a part of the first electrode, in accordance with a sputtering method
Data Source
AI summary
An electronic device including a first electrode that is provided on a substrate and includes an Mo—Nb alloy, an insulating film disposed on the first electrode, and a second electrode disposed on the first electrode with at least the insulating film interposed between the first electrode and the second electrode; and a method for producing the electronic device are provided.