MOCVD Holder Support Member for Uniform Crystal Growth
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Solution Overview
Problem
In MOCVD-based compound semiconductor manufacturing, non-uniform contact between the satellite disc and sapphire substrate leads to temperature differences, resulting in reduced uniformity of crystal growth.
Innovation Solution
An apparatus with a holder featuring a support member that maintains a predetermined distance between the substrate and the holder, using materials with low thermal conductivity (like alumina, silicon nitride, or zirconia) to minimize heat conduction and prevent contact between the substrate and holder, ensuring uniform temperature distribution during crystal growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the satellite disc contacts the sapphire substrate directly, then heating efficiency is improved, but temperature uniformity deteriorates due to non-uniform contact conditions
Solution Approach 1:
A support member made of low thermal conductivity material (alumina, silicon nitride, silica glass, or zirconia) is introduced as an intermediary between the satellite disc and sapphire substrate. This mediator prevents direct contact while maintaining positioning, thereby eliminating non-uniform contact-induced temperature differences and ensuring uniform crystal growth across the substrate surface.
Solution Approach 2:
The thermal conductivity parameter of the support structure is changed by selecting materials with thermal conductivity of 10 W/(m·K) or less. This parameter change reduces heat conduction through the support structure, preventing localized heating at contact points and maintaining uniform temperature distribution across the substrate.
2Use of energy by moving object
If the support member is made of high thermal conductivity material, then heat transfer efficiency is improved, but temperature distribution uniformity deteriorates
Solution Approach 1:
The thermal conductivity parameter is deliberately reduced by selecting support member materials with thermal conductivity of 10 W/(m·K) or less (such as alumina, silicon nitride, silica glass, or zirconia). This parameter change ensures that heat is not conducted preferentially through the support member, thereby maintaining uniform temperature distribution across the substrate while still providing adequate structural support.
3Stability of the object's composition
If the holder directly contacts the substrate, then positioning stability is improved, but temperature control precision deteriorates
Solution Approach 1:
The support member serves as an intermediary that provides mechanical positioning stability while thermally isolating the substrate from the holder. This mediator maintains the substrate at a predetermined distance, ensuring both stable positioning and uniform temperature control by preventing direct thermal contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of crystal growth by reducing heat conduction and maintaining a consistent temperature across the substrate surface, thereby improving the quality of the compound semiconductor layers.
Implementation Method 1
The support member of the holder may be made of a material having a coefficient of thermal conductivity of 10 W/(m·K) or less. The support member of the holder may be made of one selected from the group consisting of alumina (Al2O3), silicon nitride (Si3N4), silica glass (SiO2) and zirconia (ZrO2).
Implementation Method 2
a crystal of the compound semiconductor generated by a reaction of a material gas introduced into the apparatus is epitaxially grown on the sapphire substrate heated via the satellite disc
Data Source
AI summary
Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.