Modified Hydrogenated Polysiloxazane for Low-Shrinkage Silica Insulation

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Solution Overview

Problem

In the development of highly-integrated semiconductor memory cells, such as DRAM, the formation of smaller capacitors with sufficient storage capacity poses a challenge due to the need for a silica-based insulation layer that minimizes film shrinkage during conversion, as existing materials often result in significant weight loss and structural instability.

Innovation Solution

A modified hydrogenated polysiloxazane is developed by reacting hydrogenated polysiloxazane with silane compounds, reducing the nitrogen-to-silicon atom ratio and incorporating specific structural units and molecular weights to minimize film shrinkage during conversion into a silica layer, using a method involving coammonolysis and solvent substitution to achieve a stable silica-based insulation layer with reduced shrinkage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional materials are used for forming silica-based insulation layer, then the conversion process is simple, but significant film shrinkage and structural instability occur

Engineering Contradiction:
Improvefilm shrinkage controlVSAvoidmaterial composition complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses composite materials by combining hydrogenated polysiloxazane with silane compounds (polysilane, polycyclosilane, or silane oligomers) to create a modified polysiloxazane composition. This composite approach reduces film shrinkage during silica conversion while maintaining structural stability, resolving the contradiction between manufacturing precision and material complexity.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the nitrogen-to-silicon atom ratio parameter to be less than or equal to 0.95, and controls the oxygen content at 0.2 to 3 wt%. These parameter changes in the material composition enable reduced film shrinkage and improved structural stability during the conversion process.

Inventive Principle:
Principle #35Parameter changes

2Area of moving object

If the capacitor size is reduced to increase integration, then the horizontal area decreases, but sufficient storage capacity becomes difficult to achieve

Engineering Contradiction:
Improvecapacitor horizontal areaVSAvoidstorage capacity sufficiency
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent addresses the capacitor size reduction challenge by using a silica-based insulation layer formulation that enables effective vertical area utilization. The modified polysiloxazane composition allows the capacitor to achieve sufficient storage capacity through optimized vertical stacking rather than relying solely on horizontal area, thus resolving the contradiction between area reduction and capacity maintenance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If the nitrogen-to-silicon atom ratio is reduced to minimize shrinkage, then film shrinkage decreases, but the material composition becomes more complex

Engineering Contradiction:
Improveshrinkage controlVSAvoidcomposition complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs composite materials by integrating silane compounds into the hydrogenated polysiloxazane structure. This composite formulation achieves the target nitrogen-to-silicon atom ratio of less than or equal to 0.95 while maintaining composition simplicity through the synergistic interaction of components, resolving the contradiction between shrinkage control and composition complexity.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The modified hydrogenated polysiloxazane composition effectively reduces film shrinkage during the conversion process, maintaining structural integrity and preventing cracks, while allowing for uniform film formation and gap-filling in complex substrates, thereby enhancing the performance and reliability of semiconductor memory cells.

Implementation Method 1

conversion into a silica layer through wet heating

Methodology Applied
Scientific EffectHydrolysis: Hydrolysis

Implementation Method 2

conversion into a silica layer through wet heating

Methodology Applied
Scientific EffectCondensation: Condensation

Implementation Method 3

reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 4

adding a halosilane compound and a silane compound to a mixture of pyridine and water and performing coammonolysis to synthesize modified hydrogenated polysiloxazane

Methodology Applied
Scientific EffectCoammonolysis: Chemical Bonding

Data Source

PatentUS9890255B2Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming
Publication Date: 2018.02.13 CHEIL INDUSTRIES INC
  • US9890255B2 patent drawing
  • US9890255B2 patent drawing
  • US9890255B2 patent drawing

AI summary

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.