Modular Plasma Processing Chamber for Uniform Low-Temperature Deposition
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Solution Overview
Problem
Existing semiconductor processing methods are inefficient, non-uniform, and costly, with limited throughput and hardware footprint, leading to hindered device performance and non-uniform film growth due to limited gas activation and dopant concentration.
Innovation Solution
A chamber body with a plasma source assembly, heat sources, and a substrate support that facilitates controlled gas flow and plasma generation, enabling uniform heating and gas activation at low temperatures, enhancing film deposition and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If relatively higher processing temperatures are used to activate gases, then gas activation is improved, but unintended dopant diffusion occurs and device performance is hindered
Solution Approach 1:
The patent changes the physical state of the processing environment by introducing plasma (a fourth state of matter) to activate gases at lower temperatures. The plasma generator creates ionized gas that provides reactive species for film deposition without requiring high thermal activation, thus avoiding dopant diffusion while maintaining effective gas activation.
Solution Approach 2:
The patent replaces the thermal activation mechanism (heating) with a plasma-based activation mechanism. Instead of relying on thermal energy to activate gas molecules for deposition, the system uses plasma to provide the necessary activation energy through electron collisions and ion reactions, enabling low-temperature processing.
2Temperature
If conventional heating methods are used, then substrate heating is achieved, but temperature uniformity across the substrate is poor
Solution Approach 1:
The patent introduces plasma as an intermediary between the heat sources and the substrate. The plasma acts as a mediator that distributes energy more uniformly across the substrate surface through ion and electron collisions, preventing localized hot spots and achieving better temperature uniformity compared to direct conventional heating.
Solution Approach 2:
The patent changes the heating mechanism from direct thermal conduction/convection to plasma-mediated energy transfer. This parameter change in the heating approach allows for more uniform energy distribution across the substrate, improving temperature uniformity while maintaining the required processing temperature.
3Manufacturing precision
If long processing operations are used for deposition, then film quality is improved, but throughput and productivity decrease
Solution Approach 1:
The patent changes the deposition mechanism from thermal processes to plasma-enhanced processes. This parameter change enables faster deposition rates while maintaining film quality, as plasma provides highly reactive species that can deposit materials more rapidly without compromising the structural integrity or uniformity of the deposited film.
Solution Approach 2:
The plasma source assembly enables continuous and efficient deposition by maintaining a sustained plasma state throughout the processing volume. This continuous plasma action ensures consistent film growth across the substrate without interruptions or slow rates, improving both film quality and deposition speed simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves uniform gas activation and film growth, reduces dopant diffusion, and increases throughput with improved device performance and reduced gas consumption.
Implementation Method 1
The processing chamber includes a plurality of heat sources configured to heat the processing volume from below the substrate
Implementation Method 2
A plasma source assembly includes a sidewall and a gas injection insert disposed within the sidewall... A plasma generator is disposed around the sidewall
Implementation Method 3
The first conductive plate at least partially defines a processing volume... The one or more heat sources are disposed between the lid and the substrate support
Data Source
AI summary
The present disclosure relates to heaters, and related chamber kits and processing chambers, for semiconductor manufacturing. In one or more embodiments, the chamber body includes an inject section and an exhaust section, a plasma source assembly, a substrate support disposed in the processing volume, and one or more heat sources configured to heat the processing volume. The chamber body and the plasma source assembly at least partially define a processing volume. The plasma source assembly includes a sidewall and a gas injection insert disposed within the sidewall. The sidewall and the gas injection insert define a plasma source interior volume. The gas injection insert and the sidewall at least partially defining one or more gas injection channels therebetween. A plasma generator is disposed around the sidewall.