Modular Plasma Sector for Uniform PE-ALD Film Deposition
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in achieving atomic thickness control and high conformity of deposited layers, particularly as technology scales down, with existing deposition methods struggling to maintain film quality and uniformity.
Innovation Solution
The development of a plasma-enhanced atomic layer deposition (PE-ALD) system that utilizes a modular plasma generating device with sectors to control plasma distribution and density, allowing for precise deposition of materials by varying the shape, size, and density of holes in electrodes and gas inlet plates, and incorporating temperature control to optimize plasma generation and film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition techniques are used, then manufacturing simplicity is maintained, but film uniformity and atomic thickness control deteriorate
Solution Approach 1:
The deposition system is divided into multiple independent plasma-generating sectors, each with controllable plasma density and material delivery. This segmentation allows precise local control of deposition parameters across different regions of the substrate, achieving uniform film thickness and composition without requiring a completely complex monolithic system
Solution Approach 2:
Each sector in the deposition system is configured with specific hole patterns, plasma generation characteristics, and material delivery rates tailored to local requirements. This enables different regions of the substrate to receive optimized deposition conditions, achieving atomic-level thickness control and film uniformity while maintaining overall system manageability
2Productivity
If technology scales down to smaller components, then device density increases, but film conformity and quality deteriorate
Solution Approach 1:
The system employs dynamically controllable plasma generation in each sector, allowing real-time adjustment of plasma density, precursor flow rates, and deposition parameters. This dynamic control enables the system to maintain high film conformity and quality even as device dimensions scale down and geometric complexity increases
Solution Approach 2:
The deposition process utilizes precise control of multiple parameters including plasma power, gas flow rates, temperature, and precursor delivery timing in each sector. By independently adjusting these parameters, the system achieves atomic-level thickness control and high film conformity on scaled-down devices with increased density
3Productivity
If plasma density is increased to improve deposition rate, then productivity increases, but film uniformity deteriorates
Solution Approach 1:
The plasma generation system is segmented into multiple independent sectors, each capable of operating at optimized plasma densities. This allows the overall deposition rate to be increased through parallel operation of multiple sectors while each sector maintains controlled, uniform plasma conditions for consistent film quality
Solution Approach 2:
Each sector is configured with local plasma generation and material delivery optimized for its specific region. This enables high deposition rates in each local area while maintaining uniform film properties, as each sector independently controls its plasma density and precursor delivery to achieve both productivity and precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved film uniformity and quality by controlling plasma density and distribution, enhancing the precision and effectiveness of atomic layer deposition, particularly in semiconductor manufacturing.
Implementation Method 1
plasma is used to create the necessary chemical reactions in a highly controlled manner
Implementation Method 2
Plasma enhanced ALD (PE-ALD) processes use plasma which is a mixture of ions, electrons, neutral excited molecules
Implementation Method 3
The stage is heated to a temperature between 25 degrees Celsius and 300 degrees Celsius
Data Source
AI summary
A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.