Modular Semiconductor Block Assembly for Threshold Voltage Control
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Solution Overview
Problem
Conventional transistor structures are complex and difficult to form, limiting the flexibility in producing electronic devices and logic circuits, and the gate oxide thickness is fixed, making it hard to modulate the threshold voltage.
Innovation Solution
The method involves forming electronic modules using electrically conducting blocks, such as semiconducting and metallic blocks, in a mutual arrangement within an isolating region, allowing for capacitive coupling and contact to achieve desired electronic functions, enabling the production of transistors and logic circuits in a simple and flexible manner without the conventional stack structure, and using field oxide to modulate the threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor structures are used, then reliable electronic function is achieved, but device complexity increases and manufacturing becomes difficult
Solution Approach 1:
The transistor is segmented into discrete three-dimensional blocks (source block, drain block, channel block, gate block) that are separately formed and then assembled through mutual arrangement and capacitive coupling, transforming a monolithic complex structure into modular components that simplify manufacturing while maintaining functional reliability
Solution Approach 2:
The invention transitions from a planar two-dimensional transistor structure to a three-dimensional block-based architecture where blocks are arranged in space with capacitive coupling, adding a vertical/dimensional aspect that reduces in-plane complexity while preserving electrical function
2Ease of manufacture
If conventional fixed gate oxide thickness is used, then manufacturing is simplified, but threshold voltage modulation becomes difficult
Solution Approach 1:
The gate oxide thickness is transformed from a fixed static parameter to a dynamic variable that can be adjusted by changing the distance between the gate block and channel block, enabling threshold voltage modulation while maintaining manufacturing simplicity through block positioning rather than oxide growth control
3Reliability
If conventional three-dimensional stacked structures are used, then electronic functions are achieved, but integration density and flexibility are reduced
Solution Approach 1:
The block-based structure serves multiple functions simultaneously: the same block arrangement provides electrical connectivity, defines device boundaries, enables capacitive coupling, and allows for dense integration, replacing multiple specialized structural elements with universal modular blocks that increase productivity and integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of flexible electronic devices and circuits with a two-dimensional or three-dimensional structure, simplifying the production of transistors and logic circuits, and enabling modulation of the threshold voltage by altering the distance between gate and channel blocks, improving the efficiency and flexibility in electronic module design.
Implementation Method 1
at least two blocks, for example semiconducting and/or metallic, are mutually separated and in mutual capacitive coupling by way of a part of the isolating region
Implementation Method 2
at least two semiconducting blocks exhibiting opposite types of conductivity or identical types of conductivity, but with different concentrations of dopants, are in mutual contact by one of their sides
Data Source
AI summary
At least three electrically conducting blocks are disposed within an isolating region; and at least two of them are mutually separated and capacitively coupled by a part of the isolating region. At least two of them, being semiconductor, have opposite types of conductivity or identical types of conductivity, but with different concentrations of dopants, and these are in mutual contact by one of their sides. The mutual arrangement of these blocks within the isolating region, their type of conductivity and their concentration of dopants form at least one electronic module. Some of the blocks define input and output blocks.