Modular SiC Power Device Architecture for Faster Voltage-Class Development
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current power semiconductor devices in SiC require dedicated processes for each voltage class and device type, limiting integration techniques and increasing development time, while also being inefficient in fabrication and design optimization.
Innovation Solution
A modular design comprising a high voltage module (HVM) and a low voltage module (LVM) with a doped buried grid and epitaxial drift layers, allowing independent optimization and fabrication of each module, enabling efficient production of a wide range of power devices with reduced processes and faster development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dedicated processes are used for each voltage class and device type, then device performance is optimized, but development time increases and fabrication efficiency decreases
Solution Approach 1:
The patent divides the power device into separate high voltage module (HVM) and low voltage module (LVM), allowing independent optimization and fabrication processes for each module. This segmentation enables parallel development of different voltage classes and device types, reducing overall development time while maintaining optimized performance for each module type.
Solution Approach 2:
The patent creates universal modules that can be used across multiple voltage classes and device types. The HVM and LVM are designed as reusable building blocks that can be combined in various configurations to create different power devices, eliminating the need for dedicated processes for each specific device type while maintaining optimized performance.
2Reliability
If dedicated processes are used for each voltage class and device type, then device performance is optimized, but fabrication efficiency decreases
Solution Approach 1:
By segmenting the device into standardized HVM and LVM modules, the patent enables parallel fabrication of multiple modules simultaneously. Each module type can be manufactured using optimized dedicated processes, while the modular architecture allows these modules to be combined into various final devices, thereby improving overall fabrication efficiency without sacrificing performance optimization.
Solution Approach 2:
The patent performs preliminary optimization and fabrication of universal HVM and LVM modules that can serve multiple device types and voltage classes. These pre-optimized modules are fabricated using dedicated processes in advance, and then assembled into specific power devices as needed, improving fabrication efficiency by avoiding repeated optimization cycles for each device type.
3Device complexity
If integration techniques are used for monolithic solution, then device complexity is reduced, but integration capability is limited
Solution Approach 1:
The patent segments the power device into separate HVM and LVM modules that can be independently fabricated and then integrated. This modular approach reduces integration complexity compared to monolithic solutions, as each module can be optimized separately. Simultaneously, it enhances integration capability by allowing flexible combination of different module types and configurations to create various power devices.
Solution Approach 2:
The patent transitions from a single-layer monolithic integration approach to a multi-layer modular architecture. The HVM and LVM are fabricated as separate layers or modules that are then stacked or connected, adding a vertical dimension to the integration. This dimensional change enables greater versatility in device configuration while simplifying the integration process for each individual module.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces development time, lowers production costs, and allows for flexible design and avalanche capability, with the HVM optimized for different device types and LVMs for various voltage classes, enhancing current density and reducing on-resistance.
Implementation Method 1
the HVM comprising: a substrate (1) having a first conductivity type, b) an epitaxial drift layer (3) as a first drift layer with same or opposite conductivity type as the substrate (1)
Implementation Method 2
the voltage limiting effect of the HVM is determined by the doping and thickness of the drift layer (3)
Data Source
AI summary
A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid (4) with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.