Semiconductor Optical Modulator Barrier Layer Potential Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The npin-type semiconductor optical modulator faces challenges with optical diffraction loss and high-frequency electric signal leakage due to the waveguide electric separation technique, which affects the modulation operation and long-term reliability.
Innovation Solution
A semiconductor optical modulator structure is designed with a p-type semiconductor region in local contact with the barrier layer in the upper n-type clad layer, preventing optical diffraction loss by fixing the potential at the barrier layer and suppressing signal and DC bias leakage through the barrier layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If waveguide electric separation technique is adopted to suppress signal and DC bias leakage, then electrical isolation is improved, but optical diffraction loss increases due to local unevenness of the waveguide
Solution Approach 1:
The patent applies local quality by forming a p-type semiconductor region only in specific locations where signal leakage occurs, rather than uniformly modifying the entire waveguide structure. This localized modification suppresses electrical isolation issues while minimizing optical diffraction loss in other regions.
Solution Approach 2:
The p-type semiconductor region acts as an intermediary element between the n-type clad layers and the barrier layer. It mediates the electrical isolation function while maintaining optical continuity, effectively reducing signal leakage without causing significant optical diffraction loss.
2Use of energy by moving object
If p-type barrier layer is used to suppress electron current, then driving voltage is reduced, but high-frequency electric signal leakage occurs through the barrier layer
Solution Approach 1:
The patent segments the barrier layer function by introducing a separate p-type semiconductor region in the upper n-type clad layer. This segmentation allows the original p-type barrier layer to maintain its electron current suppression function while the new region handles high-frequency signal isolation, dividing the isolation function into distinct zones.
Solution Approach 2:
The patent creates a composite semiconductor structure combining n-type clad layers, p-type barrier layer, and additional p-type semiconductor regions. This composite structure leverages the complementary properties of different semiconductor regions to achieve both low driving voltage and effective high-frequency signal isolation.
3Ease of manufacture
If uniform npin-type structure is used, then manufacturing is simplified, but electric signal and DC bias leak through the waveguide
Solution Approach 1:
The patent maintains overall structural uniformity of the npin-type waveguide while introducing localized p-type semiconductor regions only where signal leakage occurs. This approach preserves manufacturing simplicity for the majority of the structure while addressing leakage issues in specific locations.
Solution Approach 2:
The patent extracts the signal leakage problem from the uniform structure by identifying specific regions where leakage occurs and targeting those areas with additional p-type semiconductor regions. This extraction approach allows the main uniform structure to remain intact while fixing the leakage issue.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective waveguide electric separation while reducing optical diffraction loss and enhancing the long-term reliability of the semiconductor optical modulator, maintaining stable modulation operations even under high bias conditions.
Implementation Method 1
the barrier layer in which a potential barrier against electrons is formed being made of a p-type semiconductor
Implementation Method 2
The modulation of a refractive index by an electro-optic effect is a basic operation of the LN modulator
Data Source
AI summary
A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.