Optical Semiconductor Modulator Ridge Formation via Insulating Mask
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Solution Overview
Problem
Conventional methods for manufacturing optical semiconductor devices result in Al-based material from the modulator adhering to the side face of the semiconductor laser during etching, leading to reliability issues.
Innovation Solution
A method is developed where an Al-free based material is used for the semiconductor laser and an Al-based material for the modulator, with a waveguide connecting them, employing a series of insulating films and etching steps to prevent Al-based material from adhering to the semiconductor laser during ridge formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching methods are used to form semiconductor laser ridge, then the manufacturing process is simple, but Al-based material from modulator adheres to semiconductor laser side face causing reliability deterioration
Solution Approach 1:
An insulating film is introduced as an intermediary layer between the Al-based modulator material and the semiconductor laser ridge during etching. This insulating film acts as a barrier that prevents Al-based material from flying and adhering to the semiconductor laser side face, thereby resolving the contamination issue without fundamentally changing the etching process itself
Solution Approach 2:
The insulating film is formed in advance on the modulator layer before the semiconductor laser ridge etching process begins. This preliminary action ensures that when etching occurs, the Al-based material already has a protective barrier in place, preventing adhesion to the semiconductor laser side face before the problem can occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents Al-based material from adhering to the semiconductor laser, enhancing the reliability of the optical semiconductor device by ensuring the modulator layer is not etched during semiconductor laser ridge formation.
Implementation Method 1
When forming a semiconductor laser ridge through dry etching
Data Source
AI summary
A second insulating film, which includes a hollowed portion inside in a region where the high mesa ridge type optical element is formed, is formed. By using the second insulating film as a mask and etching, a concave portion is formed in the transparent waveguide layer and the upper cladding layer below the hollowed portion. The modulator layer having the Al-based material is formed. By etching with the modulator layer formed in the concave portion being covered with the third insulating film, the modulator layer formed outside the concave portion is removed. By etching with the modulator layer formed in the concave portion being covered with the fourth insulating film, the ridge of the semiconductor laser is formed without exposing the modulator layer formed in the concave portion.