MOF Interlayer Dielectric for Semiconductor RC Delay Reduction
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing RC delay in metal lines due to high dielectric constants of traditional interlayer materials, which also complicate the fabrication process and increase operational power.
Innovation Solution
Incorporating a metal organic framework (MOF) interlayer dielectric layer between metal lines, which has a low dielectric constant and can be deposited in a single step, and using barrierless metals like ruthenium or molybdenum without a high resistivity metal nitride diffusion barrier layer to reduce line resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional interlayer dielectric materials are used, then the fabrication process is well-established, but the dielectric constant is high causing increased RC delay
Solution Approach 1:
The patent changes the dielectric parameter (dielectric constant) by transitioning from traditional materials to MOF materials, achieving lower dielectric constants and reduced RC delay while maintaining fabrication feasibility through vapor-phase deposition processes
Solution Approach 2:
The patent employs composite material structures by integrating MOF interlayer dielectric layers with barrierless metal lines, creating a novel combination that simultaneously addresses RC delay reduction and fabrication simplification
2Use of energy by moving object
If traditional interlayer dielectric materials with high dielectric constant are used, then the material is well-known and easy to process, but the operational power increases
Solution Approach 1:
The patent changes the dielectric constant parameter to lower values using MOF materials, which directly reduces the capacitive coupling between metal lines and thereby decreases operational power consumption while improving signal integrity
3Reliability
If barrierless metals like ruthenium or molybdenum are used without diffusion barrier layers, then the line resistance decreases, but the risk of metal diffusion increases
Solution Approach 1:
The patent introduces MOF interlayer dielectric materials as intermediary layers between metal lines and underlying structures, which serve as diffusion barriers while allowing the use of barrierless metals, thus reducing line resistance without compromising metal diffusion control
Solution Approach 2:
The patent creates a composite structure combining barrierless metal lines with MOF interlayer dielectric layers, where the MOF material provides the necessary diffusion barrier function while the metal lines maintain low resistance, achieving both goals simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MOF interlayer dielectric layer effectively reduces RC delay, simplifies the fabrication process, and decreases line cross-talk, thereby enhancing device performance and operational power efficiency.
Implementation Method 1
forming a continuous metal organic framework (MOF) material layer by reacting the metal-containing precursor layer with a vapor of a linking compound
Data Source
AI summary
A semiconductor structure includes first metal lines located above at least one semiconductor device, and a continuous metal organic framework (MOF) material layer including lower MOF portions that are located between neighboring pairs of first metal lines and an upper MOF matrix portion that continuously extends over the first metal lines and connected to each of the lower MOF portions.