Moisture Absorption Barrier Layer for Image Sensor Reliability
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Solution Overview
Problem
Current image sensors face challenges in maintaining high photonic characteristics and reliability due to moisture absorption, which leads to saturation level deterioration and increased dark levels, especially when exposed to humid environments.
Innovation Solution
The implementation of a moisture absorption barrier layer with a uniform thickness, formed using Atomic Layer Deposition (ALD) on the interconnection structure and cavity, along with a light guide unit filled with light transmittance material, minimizes the aspect ratio increase and prevents moisture absorption, thereby enhancing the reliability and luminance sensitivity of the image sensor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a moisture absorption barrier layer is formed to prevent moisture absorption, then reliability is improved, but device complexity increases
Solution Approach 1:
A moisture absorption barrier layer is formed on the interconnection structure before final assembly, preventing moisture absorption in advance. This preliminary protective action ensures reliability without requiring complex active moisture removal systems during operation.
Solution Approach 2:
The moisture absorption barrier layer acts as an intermediary between the interconnection structure and the humid environment, blocking moisture from reaching sensitive internal components while maintaining structural integrity and electrical functionality.
2Manufacturing precision
If a uniform thickness moisture absorption barrier layer is formed using ALD, then manufacturing precision is improved, but ease of manufacture decreases
Solution Approach 1:
The Atomic Layer Deposition (ALD) process replaces traditional physical deposition methods with a chemical vapor deposition approach, enabling precise control of barrier layer thickness at the atomic level while maintaining compatibility with existing semiconductor manufacturing workflows.
Solution Approach 2:
By controlling the deposition parameters of the ALD process, such as precursor flow rates, temperature, and cycle numbers, the barrier layer thickness is precisely controlled to be uniform across the entire interconnection structure, achieving manufacturing precision without excessive complexity.
3Manufacturing precision
If the moisture absorption barrier layer minimizes aspect ratio increase, then luminance sensitivity is improved, but device complexity increases
Solution Approach 1:
The moisture absorption barrier layer is applied conformally to the interconnection structure, providing localized protection where moisture absorption would most affect luminance sensitivity, while maintaining the overall simplicity of the device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents saturation level deterioration and reduces dark levels, improving the reliability and luminance sensitivity of the image sensor, even under humid conditions, by minimizing stress and maintaining uniform thickness across the moisture absorption barrier layer.
Implementation Method 1
The implementation of a moisture absorption barrier layer with a uniform thickness, formed using Atomic Layer Deposition (ALD) on the interconnection structure and cavity
Implementation Method 2
a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity
Implementation Method 3
An image sensor transforms photonic images into electrical signals
Data Source
AI summary
Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.