Moisture-Proof Ring Grounding Layout to Suppress Etching Arcing
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Solution Overview
Problem
The risk of damage to integrated circuit devices in semiconductor devices due to arcing phenomena caused by charged particles generated during the etching process is not adequately addressed in existing technologies.
Innovation Solution
A semiconductor device design incorporating a metal pattern structure that electrically connects the moisture-proof ring to a ground connection line, including a guard ring and a moisture-proof ring, to prevent or reduce the arcing phenomenon by grounding the moisture-proof ring, even in cases where the moisture-proof ring has missing regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the moisture-proof ring is formed without a preliminary ground connection, then the manufacturing process is simpler, but arcing phenomena occur during etching causing device damage
Solution Approach 1:
The patent applies preliminary action by forming the metal pattern structure (ground connection line) before the etching process. This ground connection is established in advance to prevent arcing phenomena during plasma etching, thereby protecting the integrated circuit device from damage caused by charged particles.
Solution Approach 2:
The patent uses the metal pattern structure as an intermediary element between the moisture-proof ring and the ground. This intermediary ground connection line safely conducts away charged particles generated during etching, preventing direct arcing damage to the integrated circuit device while maintaining the moisture-proof ring's protective function.
2Reliability
If the metal pattern structure is added to ground the moisture-proof ring, then arcing defects are reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent merges the ground connection function with the existing metal layers by forming the metal pattern structure using the same metal layer formation process. This integration approach adds the protective ground connection functionality without requiring completely separate manufacturing steps, thereby reducing the impact on manufacturing complexity.
3Reliability
If the metal pattern structure extends across the sealing region, then ground connection coverage is improved, but the area occupied increases
Solution Approach 1:
The patent applies local quality by strategically positioning the metal pattern structure only in critical areas where arcing protection is most needed. The ground connection line is formed to extend from the electrode structure to the moisture-proof ring through the sealing region, providing targeted protection without unnecessarily occupying the entire sealing region area.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a main chip region, a guard ring surrounding the main chip region, a moisture-proof ring surrounding the guard ring, an electrode structure in contact with the semiconductor substrate in the main chip region, and at least one metal pattern structure extending from the electrode structure to the moisture-proof ring. The at least one metal pattern structure is a connection line that grounds the moisture-proof ring.