Mold Compound Interconnect Bridge for Low-Stress Fine Routing
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Solution Overview
Problem
The existing embedded multi-die interconnect bridges (EMIBs) face thermomechanical issues due to the differential thermal expansion between silicon and build-up dielectric materials, leading to stresses and warpage, and are costly to manufacture using wafer fabrication processes.
Innovation Solution
The development of electrical interconnect bridges formed from low-cost mold compound materials with multiple routing layers and fine line and spaced traces, where all routing layers have the same coefficient of thermal expansion, mitigating thermomechanical issues and using low-cost construction techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If silicon material is used for interconnect bridges, then high-density interconnect capability is achieved, but thermomechanical stresses and warpage occur due to differential thermal expansion
Solution Approach 1:
The patent applies homogeneity by using the same mold compound material for all routing layers in the interconnect bridge. This ensures uniform thermal expansion characteristics across all layers, eliminating the differential thermal expansion that causes warpage and stress. The consistent material composition throughout the bridge structure maintains thermomechanical stability while providing high-density interconnect capability.
2Manufacturing precision
If wafer fabrication processes are used to manufacture interconnect bridges, then high precision interconnects are achieved, but manufacturing cost increases
Solution Approach 1:
The patent replaces expensive silicon material with inexpensive mold compound material that can be manufactured using standard packaging processes. This substitution dramatically reduces material costs while maintaining adequate interconnect precision through the use of fine line and spaced traces within the mold compound structure.
Solution Approach 2:
The patent substitutes wafer fabrication processes with mold compound packaging processes. Instead of using complex semiconductor manufacturing techniques to create the interconnect bridge substrate, the invention uses molding processes to form the bridge from mold compound material, significantly simplifying the manufacturing system and reducing costs.
3Reliability
If silicon interposer with TSV is used, then robust power delivery and high-speed signal connection are achieved, but device complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the silicon interposer component entirely from the interconnect system. By removing this complex intermediate substrate and its associated TSV structures, the design simplifies the overall device architecture while maintaining essential interconnect functions through direct die-to-die connections enabled by the mold compound bridge.
Data Source
AI summary
Electrical interconnect bridge technology is disclosed. An electrical interconnect bridge can include a bridge substrate formed of a mold compound material. The electrical interconnect bridge can also include a plurality of routing layers within the bridge substrate, each routing layer having a plurality of fine line and space (FLS) traces. In addition, the electrical interconnect bridge can include a via extending through the substrate and electrically coupling at least one of the FLS traces in one of the routing layers to at least one of the FLS traces in another of the routing layers.