Mold Layer Thermal Structures for IC Package Warpage Control
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Solution Overview
Problem
Integrated circuit packages face warpage issues due to temperature gradients caused by thermally conductive mold materials with high coefficients of thermal expansion, leading to potential delamination and cracking, and inadequate heat dissipation from active substrates.
Innovation Solution
Incorporating high modulus, high thermal conductivity structures within the mold material layer, made from materials like metal, graphene, or sintering paste, to enhance structural integrity and heat transfer while minimizing warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermally conductive mold material is used to improve heat dissipation, then heat transfer capability is improved, but warpage increases due to high coefficient of thermal expansion
Solution Approach 1:
The patent applies composite materials by combining thermally conductive fillers (such as aluminum oxide, aluminum nitride, or boron nitride particles) within the mold compound matrix. This composite structure enables the mold material to achieve both high thermal conductivity for effective heat dissipation and controlled dimensional stability to minimize warpage during temperature cycling and manufacturing processes.
2Reliability
If mold material layer is used to surround integrated circuit devices, then packaging effectiveness is improved, but warpage increases causing delamination and cracking
Solution Approach 1:
The patent applies parameter changes by carefully controlling the mold material's physical and mechanical properties, including its coefficient of thermal expansion, modulus of elasticity, and glass transition temperature. By optimizing these parameters, the mold compound can effectively package the integrated circuit devices while maintaining dimensional stability and resistance to warpage-induced delamination and cracking during thermal cycling and bonding processes.
3Volume of moving object
If tighter packaging is implemented to achieve smaller and thinner IC devices, then device size is reduced, but warpage and thermal management challenges increase
Solution Approach 1:
The patent applies local quality by incorporating thermally conductive pathways and structures at specific locations within the package, such as thermal vias, heat spreaders, or thermally conductive underfill materials positioned between the IC device and substrate. This localized thermal management approach enables effective heat dissipation in compact packages without requiring the entire package structure to be optimized for thermal conduction, thus maintaining small device size while addressing thermal management challenges.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces warpage and improves heat dissipation, enhancing the reliability and performance of integrated circuit packages by using high modulus, high thermal conductivity materials within the mold material layer.
Implementation Method 1
when the substrate is active, e.g. an integrated circuit device, it can generate considerable heat, which may be difficult to transfer through the mold material layer and the plurality of integrated circuit devices to a heat dissipation device
Implementation Method 2
the mold material layer causes temperature gradients... The warpage from the temperature gradients may occur during temperature cycles from the operation of the integrated circuit package and/or from manufacturing processes
Data Source
AI summary
An integrated circuit assembly may be formed comprising an electronic substrate, at least one integrated circuit device electrically attached to the electronic substrate, a mold material layer abutting electronic substrate and substantially surrounding the at least one integrated circuit, and at least one structure within the mold material layer, wherein the at least one structure comprises a material having a modulus of greater than about 20 gigapascals and a thermal conductivity of greater than about 10 watts per meter-Kelvin.


