Mold Resin Flow Direction for Semiconductor Substrate Voids

The patent applies asymmetry by determining the injection direction based on the asymmetric arrangement of bump electrodes. The mold resin is injected from the long side edge of the substrate, which has fewer bump electrodes, rather than from the short side edge. This asymmetric injection approach creates more uniform flow velocity distribution across the gap, preventing void formation in the vicinity of bump electrodes while ensuring complete gap filling.

The patent applies parameter changes by modifying the injection direction parameter based on the bump electrode pitch and arrangement. When the pitch between bump electrodes is reduced, the system dynamically adjusts the injection direction to the long side edge, where fewer bump electrodes are present. This parameter adjustment compensates for the increased flow velocity variation caused by reduced pitch, maintaining reliable void-free filling even as device integration improves.

The patent applies preliminary action by ensuring complete and uniform mold resin filling in the gap between substrates before thermal setting treatment. By injecting from the long side edge and preventing void formation in advance, the substrate structure is stabilized prior to thermal expansion and contraction. This preliminary void prevention reduces stress concentration during subsequent thermal processing, improving thermal durability without compromising substrate strength.