Molded Bridge Interposer with Varying-Pitch Copper Studs
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in producing smaller, higher-density semiconductor devices with efficient electrical interconnections, particularly due to the high cost and complexity of through-silicon vias (TSVs) and specialized substrate technologies.
Innovation Solution
The development of a fully molded bridge interposer with ultra-high density copper studs and varying pitch connections, combined with a frontside and backside build-up interconnect structure, allows for efficient integration of semiconductor components with ultra-high and high-density interconnects, eliminating the need for expensive large silicon dies and specialized substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) and specialized substrate technologies are used to achieve high-density interconnections, then electrical performance and connectivity are improved, but manufacturing cost and device complexity increase significantly
Solution Approach 1:
The patent replaces expensive, complex TSV technology with a simpler, more cost-effective copper stud array structure. The copper studs are formed directly on the substrate without requiring through-silicon via fabrication processes, eliminating the need for specialized substrate technologies while maintaining high-density interconnection capabilities. This substitution reduces both manufacturing cost and process complexity.
Solution Approach 2:
The patent changes the interconnection architecture from three-dimensional TSV structures to a two-dimensional copper stud array with varying pitch patterns. By modifying the structural parameters and spatial arrangement of interconnect elements, the patent achieves high-density connectivity without the manufacturing complexity associated with TSV formation, including drilling, plating, and alignment processes.
2Adaptability or versatility
If larger silicon dies are used to accommodate more components and interconnections, then device functionality and connectivity are improved, but device size and manufacturing cost increase
Solution Approach 1:
The patent transitions from planar component placement to a three-dimensional stacked architecture enabled by the copper stud array. Multiple semiconductor components are vertically stacked and interconnected through the copper studs, allowing high device functionality to be achieved in a smaller footprint by utilizing the vertical dimension for interconnections rather than requiring expanded die area.
Solution Approach 2:
The patent employs asymmetric pitch patterns in the copper stud array, with finer pitch in certain regions and coarser pitch in others. This asymmetric arrangement optimizes the distribution of interconnection density across the substrate, allowing high functionality to be concentrated in specific areas while reducing overall die size and maintaining manufacturing efficiency.
3Ease of manufacture
If uniform pitch copper stud arrays are used for simplification, then manufacturing ease is improved, but interconnection density and electrical performance deteriorate
Solution Approach 1:
The patent implements varying pitch patterns in the copper stud array, where different regions of the substrate have different stud densities. This local variation in pitch allows optimization of interconnection density in specific areas requiring high connectivity, while maintaining simpler, coarser pitch in regions with lower interconnection requirements, thus balancing manufacturing ease with electrical performance.
Data Source
AI summary
A semiconductor device may comprise a bridge die comprising copper studs. Copper posts may be disposed in a periphery of the bridge die. An encapsulant may be disposed on five sides of the bridge die, on sides of the copper studs, and on sides of the copper posts that leave ends of the copper studs and opposing first and second ends of the copper posts exposed from the encapsulant. A frontside build-up interconnect structure may be formed over the copper studs of the bridge die and coupled to second ends of the copper posts opposite the first ends of the copper posts. The frontside build-up interconnect structure comprising first pads at a first pitch within a footprint of the bridge die and second pads at a second pitch outside a footprint of the bridge die. The first pitch may be at least 1.5 times less than the second pitch.