Molded Semiconductor Package Layout for Heat Dissipation and Warpage
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving effective thermal dissipation and warpage control in semiconductor packages due to the iterative reduction of feature sizes and increased molding compound volume, which leads to defects such as poor warpage control and delamination.
Innovation Solution
A semiconductor package design that includes a molded die bonded to a bulk semiconductor substrate, such as silicon, which increases the volume of semiconductor material for improved thermal dissipation without significantly increasing the molding compound volume, thereby avoiding defects associated with excessive molding compound. This design also incorporates conductive vias in the substrate to enhance thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the molding compound volume is increased to accommodate larger semiconductor packages, then the package size and integration density are improved, but warpage control deteriorates and delamination defects occur
Solution Approach 1:
The patent changes the material composition parameters of the molding compound by incorporating glass beads (5-20 micrometers in size) at concentrations of 30-70 wt%. This parameter change modifies the thermal expansion coefficient and mechanical properties of the molding compound, enabling it to maintain structural integrity and reduce warpage even at increased volumes required for larger semiconductor packages.
Solution Approach 2:
The patent creates a composite molding compound by combining organic resin with inorganic glass beads. This composite structure provides both the volume expansion capability needed for larger packages and the mechanical reinforcement required to control warpage and prevent delamination. The glass beads act as a reinforcing skeleton within the organic matrix, distributing stress and maintaining dimensional stability.
2Quantity of substance
If feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but thermal dissipation becomes more difficult
Solution Approach 1:
The patent modifies the thermal conductivity parameter of the molding compound by incorporating glass beads with specific thermal properties. The glass beads (5-20 micrometers) have different thermal expansion coefficients and thermal conductivity compared to the organic resin, creating a composite material that maintains effective thermal pathways even as feature sizes are reduced and integration density increases.
Solution Approach 2:
The glass beads act as intermediary thermal conduits within the molding compound. As electronic components generate heat at smaller feature sizes, the glass bead network provides alternative thermal pathways through the molding compound, mediating heat transfer from the high-density integrated components to the external environment, thereby preventing heat accumulation.
3Temperature
If the semiconductor material volume is increased to improve thermal dissipation, then thermal conductivity is enhanced, but the package size increases
Solution Approach 1:
The patent employs a composite molding compound where glass beads (5-20 micrometers) are dispersed within an organic resin matrix. This composite structure increases the effective thermal conductivity of the molding compound without requiring a proportional increase in semiconductor material volume. The glass beads create a percolating thermal network that enhances heat dissipation efficiency while maintaining compact package dimensions.
Solution Approach 2:
The patent applies local quality enhancement by concentrating glass beads (30-70 wt%) in specific regions of the molding compound, particularly in areas proximal to heat-generating electronic components. This localized reinforcement of thermal conductivity properties improves heat dissipation from critical hot spots without requiring uniform increases in overall package volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves thermal dissipation and maintains acceptable warpage control by increasing the semiconductor material volume without increasing the molding compound volume, thus reducing defects like delamination and warpage issues.
Implementation Method 1
bonded to a bulk semiconductor substrate, such as silicon, which increases the volume of semiconductor material for improved thermal dissipation
Implementation Method 2
incorporates conductive vias in the substrate to enhance thermal conductivity
Data Source
AI summary
A package includes a first semiconductor substrate; an integrated circuit die bonded to the first semiconductor substrate with a dielectric-to-dielectric bond; a molding compound over the first semiconductor substrate and around the integrated circuit die; and a redistribution structure over the first semiconductor substrate and the integrated circuit die, wherein the redistribution structure is electrically connected to the integrated circuit die. The integrated circuit die includes a second semiconductor substrate, and wherein the second semiconductor substrate comprises a first sidewall, a second sidewall, and a third sidewall opposite the first sidewall and the second sidewall, and the second sidewall is offset from the first sidewall.