Molded Through-Mold Via Structure for Dense, Low-Warpage IC Packaging
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Solution Overview
Problem
Integrated circuit (IC) packages with embedded multi-die interconnect bridges (EMIBs) are susceptible to damage during embedding and warpage during operation, necessitating improved manufacturing processes for dense interconnects.
Innovation Solution
The implementation of through-mold vias (TMVs) in microelectronic components, embedded within mold material regions, provides conductive pathways that enhance interconnect density and reduce warpage, using existing semiconductor processing techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through-mold vias are implemented to increase interconnect density, then manufacturing complexity increases, but interconnect density improves
Solution Approach 1:
The manufacturing process is divided into distinct stages: forming cavities in the mold material, depositing conductive material in the cavities, and curing the mold material. This segmentation allows each step to be optimized independently, reducing overall manufacturing complexity while achieving high interconnect density through the embedded conductive pathways.
Solution Approach 2:
The cavities for the through-mold vias are formed and prepared with conductive material before the final curing of the mold material. This preliminary action ensures that the conductive pathways are already in place, allowing for high interconnect density to be achieved without adding complexity to the final assembly process.
2Length of moving object
If EMIBs are made ultra-thin to reduce size, then susceptibility to damage during embedding increases
Solution Approach 1:
The EMIB structure combines the ultra-thin interconnect bridge with the mold material to form a composite assembly. The mold material provides mechanical support and protection to the fragile ultra-thin EMIB during embedding and operation, reducing damage susceptibility while maintaining the size reduction benefits.
Solution Approach 2:
The mold material is applied around the ultra-thin EMIB before the embedding process, creating a protective cushion that prevents damage during handling and installation. This beforehand protection allows the EMIB to be made ultra-thin without compromising reliability.
3Stability of the object's composition
If EMIBs are made ultra-thin to reduce warpage, then susceptibility to damage during embedding increases
Solution Approach 1:
The combination of ultra-thin EMIB and mold material creates a composite structure where the mold material compensates for the fragility of the thin EMIB. This composite approach reduces warpage while providing the necessary mechanical strength to prevent damage during embedding.
Solution Approach 2:
The mold material acts as a counterweight or supporting structure that balances the mechanical stresses on the ultra-thin EMIB, preventing both warpage and damage. The mold material's structural properties compensate for the reduced thickness of the EMIB.
Data Source
AI summary
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.