Molded TSV-TMV Package Structure for Dense EMIB Interconnects

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Integrated circuit (IC) packages with embedded multi-die interconnect bridges (EMIBs) are susceptible to damage during embedding and warpage, limiting their performance and reliability in providing dense interconnections.

Innovation Solution

The use of through-substrate vias (TSVs) with conductively coupled through-mold vias (TMVs) in molded regions on both faces of a substrate, providing mechanical support and reducing the likelihood of damage, while enabling high aspect ratio components for dense interconnect routing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If EMIBs are used to provide dense interconnections, then interconnect density is improved, but susceptibility to damage and warpage increases

Engineering Contradiction:
Improveinterconnect densityVSAvoidsusceptibility to damage and warpage
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies beforehand cushioning by embedding the EMIB structure within a substrate that provides mechanical support and stress distribution. The substrate acts as a cushioning medium that protects the fragile EMIB interconnects from damage during handling and operation, while also compensating for warpage through its structural properties.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The substrate serves as an intermediary between the EMIB interconnects and the external environment. It mediates the mechanical stresses and provides a stable platform that allows the EMIB to function with high interconnect density without being directly exposed to damaging forces or warpage-inducing conditions.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If ultra-thin EMIBs are used, then interconnect density is improved, but mechanical strength and resistance to damage deteriorate

Engineering Contradiction:
Improveinterconnect densityVSAvoidmechanical strength
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The patent applies the nested doll principle by placing the ultra-thin EMIB structure inside a larger substrate structure. The EMIB is nested within the substrate, which provides the necessary mechanical strength and protection, allowing the system to achieve high interconnect density without compromising overall structural integrity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent uses composite materials by combining the ultra-thin EMIB interconnect layer with a stronger substrate material. This composite structure leverages the high interconnect density capability of the EMIB while the substrate material provides the mechanical strength needed to resist damage during handling and operation.

Inventive Principle:
Principle #40Composite materials

3Adaptability or versatility

If EMIB embedding is performed, then interconnect functionality is improved, but manufacturing complexity and risk of damage increase

Engineering Contradiction:
Improveinterconnect functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-embedding the EMIB structure within the substrate before final assembly steps. This preliminary embedding action simplifies subsequent manufacturing processes and reduces the risk of damage during later handling, as the EMIB is already protected within the substrate structure.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent merges the EMIB embedding process with the substrate fabrication process. By combining these steps into an integrated manufacturing flow, the patent reduces overall manufacturing complexity and minimizes the number of separate handling operations that could expose the EMIB to damage risks.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12176292B2Microelectronic component having molded regions with through-mold vias
Publication Date: 2024.12.24 INTEL CORP
  • US12176292B2 patent drawing
  • US12176292B2 patent drawing
  • US12176292B2 patent drawing

AI summary

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.