Molecular Memory Device Manufacturing with Polymer Resistance Control
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Solution Overview
Problem
Current molecular memory devices face challenges in increasing storage density, requiring advanced manufacturing processes like LSI to integrate storage elements effectively, while maintaining electrical resistance control and preventing short circuits.
Innovation Solution
A method involving the formation of alternating layers of silicon nitride and metal wirings with air gaps and self-assembled polymers, where the polymers are placed between metal wirings to control electrical resistance, using sacrificial films and insulating materials to ensure compatibility with LSI processes and prevent short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If molecular memory devices are manufactured to increase storage density, then storage capacity is improved, but manufacturing complexity increases due to LSI process requirements
Solution Approach 1:
The device is divided into distinct functional layers: first and second wirings, sacrificial films, insulating films, and polymer layers. Each layer is formed through separate manufacturing steps, allowing precise control over the structure and enabling high-density integration while maintaining manufacturability through modular construction
Solution Approach 2:
The patent transitions from planar memory structures to three-dimensional stacked architectures with wirings and polymer layers arranged in multiple vertical layers. This vertical stacking enables increased storage density by utilizing the third dimension, while the layered structure remains compatible with standard LSI manufacturing processes
2Reliability
If polymers are placed between metal wirings to control electrical resistance, then data storage capability is improved, but risk of short circuits increases
Solution Approach 1:
Insulating films are introduced as intermediary layers between the metal wirings and polymer layers. These insulating films act as barriers that prevent direct electrical contact between adjacent conductive elements, eliminating short circuit risks while allowing the polymer layers to maintain their electrical resistance control function for data storage
Solution Approach 2:
The harmful conductive property is extracted from the insulating film by selecting materials with high electrical resistance. The insulating films are specifically chosen to have properties that prevent current leakage and short circuits, separating the electrical isolation function from the data storage function performed by the polymer layers
3Manufacturing precision
If sacrificial films are used to form air gaps for polymer embedding, then manufacturing precision is improved, but process steps increase
Solution Approach 1:
Sacrificial films are formed in advance during the wiring layer fabrication process, before the polymer layers are deposited. These pre-formed sacrificial films define the exact positions and dimensions of future air gaps, ensuring precise polymer placement. The sacrificial films are then removed to create the required air gaps, a process that can be integrated into existing manufacturing workflows
Solution Approach 2:
The sacrificial films serve as temporary intermediary structures that facilitate precise air gap formation. They act as placeholders that define the geometry of air gaps during manufacturing, and are subsequently removed to leave behind precisely formed air gaps. This intermediary approach enables high manufacturing precision while the process steps can be consolidated with other fabrication operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the high-density integration of molecular memory devices, stabilizes operation by preventing leakage current, and reduces power consumption by controlling the number of polymers between metal wirings, thus enhancing storage capacity and operational efficiency.
Implementation Method 1
By controlling the state of the polymer, the electrical resistance between the lower electrode and the upper electrode is varied to store data
Implementation Method 2
self-assembled polymers, where the polymers are placed between metal wirings
Data Source
AI summary
According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members.