Molecular Resist Composition for Lithography LWR Reduction

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Solution Overview

Problem

Conventional molecular resist compositions based on low molecular weight compounds fail to achieve sufficient reduction in line width roughness (LWR) and resolution, especially when compared to polymeric resist compositions, due to issues with uneven film quality and bridging defects during development.

Innovation Solution

A molecular resist composition comprising a betaine type onium compound with a sulfonium cation and sulfonate anion moiety, combined with an organic solvent, which undergoes photo-decomposition to enhance dissolution contrast and improve lithographic performance factors such as exposure latitude, mask error factor, and LWR, without the need for a base resin.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If molecular resist compositions based on low molecular weight compounds are used, then the molecular size is small which should reduce LWR, but uneven film quality and uneven dissolution occur leading to increased LWR and bridging defects

Engineering Contradiction:
ImproveLWRVSAvoidfilm quality uniformity
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent uses a composite material system consisting of a low molecular weight compound (formula 1) combined with a specific base resin (formula 2). The low molecular weight compound provides small molecular size for reduced LWR, while the base resin forms a three-dimensional network structure that ensures uniform film quality and dissolution. This composite approach resolves the contradiction by combining the advantages of both material types.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent introduces a base resin with specific functional groups (carboxyl, hydroxyl, or amine groups) that locally form crosslinked networks in the resist composition. This creates regions of enhanced structural stability and uniform dissolution throughout the film, addressing the uneven film quality issue while preserving the overall low molecular weight characteristics for reduced LWR.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If low molecular weight compounds are used in resist composition, then molecular size is reduced, but bridging defects occur during development due to uneven dissolution

Engineering Contradiction:
Improvepattern formation accuracyVSAvoiddefect rate
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent combines low molecular weight compounds with base resins to create a composite resist system. The base resin component forms a uniform three-dimensional network structure during development, preventing bridging defects while maintaining the resolution benefits of low molecular weight compounds. This composite structure ensures reliable pattern formation without defects.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent employs a pre-baking step before development to预先 form the three-dimensional network structure of the base resin. This preliminary action ensures uniform dissolution characteristics are established before the development process begins, preventing bridging defects during subsequent development while maintaining high pattern formation accuracy.

Inventive Principle:
Principle #10Preliminary action

3Stability of the object's composition

If polymeric resist compositions are used, then film quality uniformity is improved, but LWR reduction is insufficient compared to molecular resist compositions

Engineering Contradiction:
Improvefilm quality uniformityVSAvoidLWR
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent creates a hybrid composite resist composition that combines the uniform film quality characteristics of polymeric base resins with the small molecular size benefits of low molecular weight compounds. The base resin ensures uniform dissolution and film quality, while the low molecular weight compound (formula 1) components provide superior LWR reduction, achieving both advantages simultaneously.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent segments the resist composition into distinct functional components: low molecular weight compounds (formula 1) that provide small molecular size for reduced LWR, and base resin (formula 2) that provides uniform film quality and dissolution. This segmentation allows each component to optimize its specific function while working together to achieve overall superior performance.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves improved dissolution contrast and pattern performance with reduced LWR, leading to enhanced resolution and micropatterning capabilities when processed using high-energy radiation.

Implementation Method 1

the photoacid generator is decomposed to generate a corresponding strong acid

Methodology Applied
Scientific EffectPhoto-decomposition: Photodissociation

Data Source

PatentUS11953827B2Molecular resist composition and patterning process
Publication Date: 2024.04.09 SHIN ETSU CHEMICAL CO LTD
  • US11953827B2 patent drawing
  • US11953827B2 patent drawing
  • US11953827B2 patent drawing

AI summary

A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.