Molybdenum Carbide Liners for 3D Memory Stability
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Solution Overview
Problem
Current three-dimensional memory devices face challenges in forming reliable word lines using molybdenum due to issues with halogen-containing precursor gases, which can damage blocking dielectric layers and cause device instability.
Innovation Solution
The use of molybdenum carbide or carbonitride liners, deposited using halogen-free precursor gases, as conductive liners in combination with molybdenum metal fill material, to form electrically conductive layers in three-dimensional memory devices, preventing halogen diffusion and enhancing device stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If halogen-containing precursor gases are used to deposit molybdenum word lines, then the word lines can be formed, but the blocking dielectric layers are damaged and device stability deteriorates
Solution Approach 1:
A molybdenum carbide or molybdenum carbonitride liner is deposited as an intermediary layer between the blocking dielectric layer and the molybdenum word line. This liner acts as a protective mediator that prevents direct contact and harmful interactions between the halogen-containing precursor gases and the blocking dielectric layer, while still allowing the molybdenum word line to be formed.
Solution Approach 2:
The word line structure is formed as a composite material system consisting of a molybdenum carbide or molybdenum carbonitride liner combined with a molybdenum metal fill material. This composite structure provides both the protective function against halogen damage and the electrical conductivity required for word line operation.
2Reliability
If molybdenum carbide or carbonitride liners are deposited using halogen-free precursor gases, then etching damage to dielectric layers is reduced, but the manufacturing process complexity increases
Solution Approach 1:
The deposition process parameters are changed by using halogen-free precursor gases instead of halogen-containing ones. This parameter change enables the formation of molybdenum carbide or molybdenum carbonitride liner material with improved properties that prevent halogen diffusion and protect the blocking dielectric layer during subsequent processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves data retention and reduces etching damage to dielectric layers, leading to more reliable and stable three-dimensional memory devices by using halogen-free molybdenum carbide or carbonitride conductive liners with molybdenum fill material.
Implementation Method 1
The use of molybdenum carbide or carbonitride liners, deposited using halogen-free precursor gases, as conductive liners in combination with molybdenum metal fill material, to form electrically conductive layers in three-dimensional memory devices, preventing halogen diffusion and enhancing device stability.
Implementation Method 2
The use of molybdenum carbide or carbonitride liners, deposited using halogen-free precursor gases, as conductive liners
Data Source
AI summary
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements located at levels of the electrically conductive layers. Each of the electrically conductive layers includes a respective conductive liner comprising molybdenum carbide or carbonitride, and a respective molybdenum metal fill material portion.