PE-ALD Molybdenum Chamber Conditioning for Lower Particle Adders

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Solution Overview

Problem

Plasma-enhanced Atomic Layer Deposition (PE-ALD) processing chambers for molybdenum deposition suffer from low mean wafers between cleaning (MWBC) due to Mo accumulation on the process kit, leading to particle adders that reduce device yield and require frequent, time-consuming cleanings and maintenance.

Innovation Solution

Implementing a conditioning plasma treatment with hydrogen or hydrogen/oxygen radicals to densify and improve the adhesion of the molybdenum layer on the process kit, reducing particle adders and extending the time between cleanings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If plasma-enhanced atomic layer deposition is used to deposit molybdenum films, then deposition quality and adhesion are improved, but molybdenum accumulation on the process kit increases leading to frequent particle adders

Engineering Contradiction:

Improvefilm adhesionVSAvoidparticle adders

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the physical and chemical parameters of the molybdenum layer by applying plasma treatment at controlled temperature and power conditions. This transforms the Mo layer properties to reduce particle adders while maintaining adhesion, directly resolving the contradiction between film quality and particle contamination

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent converts the harmful Mo accumulation on the process kit into a beneficial conditioned layer through plasma treatment. The previously harmful accumulated Mo is transformed into a stable, low particle-generating layer, turning the problem into a solution

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Manufacturing precision

If frequent dry cleaning and preconditioning are performed to reduce particle adders, then device yield is improved, but fabrication time increases and wafer throughput decreases

Engineering Contradiction:

Improvedevice yieldVSAvoidwafer throughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary plasma conditioning treatment during normal operation to prepare the process kit surface, preventing particle adder formation before they occur. This proactive approach eliminates the need for frequent interruptive cleanings, maintaining both yield and throughput

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent enables continuous deposition operations by implementing plasma treatment that maintains the process kit in a clean state without requiring interruptive dry cleaning cycles. The useful action of deposition continues uninterrupted, preserving wafer throughput while ensuring device yield

Inventive Principle:

Principle #20Continuity of useful action

3Object-generated harmful factors

If the processing chamber is cleaned more frequently to remove Mo accumulation, then particle adders are reduced, but equipment downtime increases

Engineering Contradiction:

Improveparticle addersVSAvoidequipment downtime

Core Design Contradiction:

Object-generated harmful factorsVSLoss of time

Solution Approach 1:

The patent replaces mechanical dry cleaning with plasma-based chemical treatment. This substitution allows for in-situ cleaning without chamber disassembly or extended downtime, reducing particle adders while minimizing equipment interruption

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent implements self-service cleaning where the plasma treatment is performed within the normal deposition cycle, allowing the system to clean itself without external intervention or dedicated maintenance downtime. The process kit conditions itself during regular operation

Inventive Principle:

Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The plasma treatment significantly reduces particle adders, increasing the MWBC and improving wafer throughput by minimizing film defects and maintenance downtime.

Implementation Method 1

exposing the processing chamber to a plasma treatment to reduce an amount of particle adders formed on subsequent wafers

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

Plasma-enhanced Atomic Layer Deposition (PE-ALD) processing chambers used for depositing some types of molybdenum films

Methodology Applied

Scientific EffectPlasma-enhanced deposition: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS20250323028A1Methods for extending MWBC in semiconductor processing chambers

Publication Date: 2025.10.16 APPLIED MATERIALS INC

AI summary

Molybdenum deposition methods including depositing molybdenum on one or more wafers in a dry cleaned and conditioned processing chamber to a predetermined total deposition thickness, an amount of particle adders on the one or more wafers increasing with deposition thickness from a first amount to a second amount; and exposing the processing chamber to a plasma treatment to reduce an amount of particle adders formed on subsequent wafers to a third amount below the second amount, the plasma treatment extending a time period between a dry cleaning and re-conditioning of the processing chamber.