Molybdenum CMP Slurry Composition for High Removal and Low Defects
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Solution Overview
Problem
Molybdenum and its alloys are difficult to polish with high removal rate and low defectivity due to their hardness and chemical resistance, posing a challenge in Chemical Mechanical Polishing (CMP) processes.
Innovation Solution
Polishing compositions comprising abrasives, organic acids or their salts, first amine compounds with a 6-24 carbon alkyl chain, second amine compounds with at least two nitrogen atoms, and an aqueous solvent are used to selectively remove molybdenum and its alloys while minimizing corrosion and etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP processes are used on molybdenum, then the polishing process can be performed, but the removal rate is low and defectivity is high due to molybdenum's hardness and chemical resistance
Solution Approach 1:
The patent changes the chemical parameters of the CMP slurry by incorporating specific organic acids (sulfonic, carboxylic, or phosphonic acids) and amine compounds to create a chemically active environment that enhances molybdenum removal rate while controlling defectivity through optimized chemical interactions
Solution Approach 2:
The patent uses a composite polishing slurry system combining multiple chemical components (organic acids, amine compounds, abrasives) that work synergistically to overcome molybdenum's inherent resistance to polishing, achieving both high removal rate and low defectivity
2Productivity
If aggressive polishing methods are used to increase removal rate, then productivity improves, but corrosion resistance and static etch rate worsen
Solution Approach 1:
The patent optimizes the chemical composition parameters of the slurry, specifically using organic acids with controlled strength and amine compounds to achieve aggressive enough polishing for high removal rate while maintaining corrosion resistance through balanced chemical interactions
Solution Approach 2:
The amine compounds and organic acids act as intermediary substances that facilitate the removal of molybdenum through controlled chemical reactions, enabling high removal rates without direct aggressive mechanical or chemical attack that would cause corrosion
3Ease of manufacture
If standard CMP slurry composition is used, then the process is simple, but selective removal of molybdenum relative to other materials is insufficient
Solution Approach 1:
The patent modifies the slurry composition by incorporating specific organic acids and amine compounds that create selective chemical interactions with molybdenum, enhancing selectivity while maintaining a relatively simple single-step CMP process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compositions achieve controlled removal of molybdenum with excellent corrosion resistance and low static etch rate, enhancing polishing efficiency and reducing defects.
Implementation Method 1
CMP is a process used to planarize/flatten a wafer surface by removing material using abrasion-based physical processes
Implementation Method 2
CMP is a process used to planarize/flatten a wafer surface by removing material using abrasion-based physical processes concurrently with surface-based chemical reactions
Data Source
AI summary
This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.