Molybdenum Film Etching Composition for Speed and Residue Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing etching processes for molybdenum films in integrated circuit manufacturing face challenges in controlling etching speed and preventing residue generation, leading to complex manufacturing processes and reduced reliability of integrated circuit devices.
Innovation Solution
An etching composition comprising 0.1 wt % to 5 wt % oxidant, 10 wt % to 40 wt % chelate agent with mineral acid, and 0.01 wt % to 3 wt % corrosion inhibitor, including ammonium salt or amine compounds, is used to control the etching speed and inhibit residue formation by oxidizing and dissolving molybdenum atoms, while an organic solvent is employed to maintain a non-aqueous environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing etching processes are used for molybdenum films, then the etching can be performed, but the etching speed cannot be controlled and residue is generated
Solution Approach 1:
The patent changes the chemical parameters of the etching composition by specifying precise concentrations of oxidant (0.1-5 wt%), chelate agent (10-40 wt%), and corrosion inhibitor (0.01-3 wt%). This parameter optimization enables controlled etching speed while preventing residue formation, resolving the contradiction between etching precision and reliability
Solution Approach 2:
The patent creates a composite etching composition combining multiple chemical components (oxidant, chelate agent, corrosion inhibitor, and organic solvent) that work synergistically. The oxidant provides controlled oxidation, the chelate agent prevents precipitation, and the corrosion inhibitor protects against unwanted reactions, achieving both speed control and residue prevention
2Manufacturing precision
If existing etching processes are used for molybdenum films, then the etching can be performed, but the manufacturing process becomes complex
Solution Approach 1:
The patent merges multiple functions into a single etching composition formulation. By combining oxidant, chelate agent, corrosion inhibitor, and organic solvent in specific ratios, the process achieves both controlled etching and residue prevention in one step, simplifying the manufacturing process while maintaining precision
Solution Approach 2:
The patent optimizes the concentration parameters of each component to achieve the desired etching performance within a single process step. The specific ranges (0.1-5 wt% oxidant, 10-40 wt% chelate agent, 0.01-3 wt% corrosion inhibitor) are tuned to provide both control and simplicity
3Manufacturing precision
If existing etching processes are used for molybdenum films, then the etching can be performed, but the integration density is reduced
Solution Approach 1:
The patent uses optimized chemical parameters to achieve precise etching with clean profiles, enabling tighter feature spacing and higher integration density. The controlled reaction parameters prevent residue that would otherwise limit how closely features can be packed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching composition effectively controls the etching speed of molybdenum films, preventing residue formation and simplifying the manufacturing process, thereby enhancing the reliability and integration density of integrated circuit devices.
Implementation Method 1
oxidizing and dissolving molybdenum atoms
Implementation Method 2
chelate agent including a mineral acid
Implementation Method 3
corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound
Data Source
AI summary
An etching composition for etching a molybdenum film, the etching composition includes about 0.1 wt % to about 5 wt % of an oxidant; about 10 wt % to about 40 wt % of a chelate agent, the chelate agent including a mineral acid; about 0.01 wt % to about 3 wt % of a corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound, or a combination thereof; and an organic solvent, all wt % being based on a total weight of the etching composition.


