Molybdenum RF Rod Structure for Low-Loss Substrate Support
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate supporting apparatuses in semiconductor processing face challenges in reducing power resistance, heat generation, and increasing lifespan, while also being difficult to assemble efficiently.
Innovation Solution
A substrate supporting apparatus is designed with a heating plate containing a radio frequency (RF) electrode and an RF delivery structure, utilizing an RF rod made of molybdenum with specific physical properties for efficient power delivery and heat management, along with a heater power delivery structure to control temperature and reduce thermal damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional RF delivery structures are used, then power delivery is achieved, but power loss and heat generation occur
Solution Approach 1:
The patent changes the material parameter of the RF delivery structure by using molybdenum with specific physical properties (relative permeability less than 100, volume resistivity smaller than 70 nΩm, melting point higher than 1400°C). This parameter optimization reduces power loss and heat generation in the RF delivery structure while maintaining effective power delivery to the RF electrode.
2Reliability
If conventional materials are used for RF rods, then structural integrity is maintained, but power delivery efficiency is reduced
Solution Approach 1:
The patent specifies precise material parameters for the RF rod: relative permeability less than 100, volume resistivity smaller than 70 nΩm, and melting point higher than 1400°C. These parameter changes optimize both structural integrity and power delivery efficiency, eliminating the trade-off between reliability and energy loss.
3Reliability
If complex assembly structures are used, then connection reliability is improved, but assembly difficulty increases
Solution Approach 1:
The heating plate is divided into multiple sections with separate insertion holes for the RF rod and heater power rod. This segmentation allows each component to be independently positioned and assembled, simplifying the manufacturing process while maintaining reliable connections through dedicated insertion holes that ensure proper alignment and contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces power loss, minimizes heat generation, extends the apparatus' lifespan, and simplifies assembly by using molybdenum for both RF and heater power rods, ensuring robust connectivity and efficient plasma-enhanced chemical vapor deposition processes.
Implementation Method 1
the RF rod comprises a first material, a relative permeability of the first material is less than 100, a volume resistivity of the first material is smaller than 70 nΩm
Implementation Method 2
the substrate is fastened by a substrate supporting apparatus which may be heated to control a temperature of the substrate
Implementation Method 3
In the PE-CVD process, the substrate is fastened by a substrate supporting apparatus which may be heated to control a temperature of the substrate
Implementation Method 4
in a plasma-enhanced chemical vapor deposition (PE-CVD) process, a deposition process on a substrate is performed using plasma
Data Source
AI summary
A substrate supporting apparatus includes a heating plate, a radio frequency (RF) electrode in the heating plate, and an RF delivery structure in contact with a bottom surface of the RF electrode. The heating plate includes a first insertion hole, which is recessed into the heating plate from a bottom surface of the heating plate to expose the bottom surface of the RF electrode. The RF delivery structure includes an RF rod, a portion of which is inserted in the first insertion hole, and through which an RF power is supplied to the RF electrode. The RF rod includes a first material, and a relative permeability of the first material is less than 100, a volume resistivity of the first material is smaller than 70 nΩm, and a melting point of the first material is higher than 1400° C.