Molybdenum Sputtering Target via Electric Discharge Plasma Sintering

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Solution Overview

Problem

Conventional methods for manufacturing molybdenum sputtering targets for CIGS solar cells face challenges in achieving high density, uniform composition, and purity, particularly due to limitations in crystal particulate control and high processing costs associated with long molding processes and external heating methods.

Innovation Solution

The method employs an electric discharge plasma sintering process, where molybdenum powder is filled into a graphite mold, heated under controlled pressure and temperature conditions, with a temperature elevating pattern and vacuum environment to produce a high-density, uniform, and pure sputtering target in a simplified and shortened process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the dissolution/casting method is used to manufacture molybdenum sputtering targets, then mass production is facilitated and manufacturing costs are reduced, but crystal particulate control is limited and high density achievement is difficult

Engineering Contradiction:
Improvemass production capabilityVSAvoidcrystal particulate control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent replaces the conventional dissolution/casting method with a powder metallurgy process using electric discharge plasma sintering. This substitution enables precise control over crystal particulates and achieves high density (95% theoretical density) while maintaining productivity through a streamlined single-step sintering process that eliminates multiple intermediate steps required by traditional methods.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent applies specific sintering parameters including temperature range of 1000-1500°C, pressure of 50-70 MPa, and sintering time of 5-30 minutes to achieve optimal density and microstructure. These controlled parameter changes enable precise manipulation of crystal growth and particle consolidation, resolving the contradiction between production efficiency and manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the conventional powder metallurgy method with HIP or HP is used, then high-density sintered bodies can be obtained, but the process time is long and processing costs are high

Engineering Contradiction:
ImprovedensityVSAvoidprocess time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent implements continuous heating and sintering through electric discharge plasma, eliminating the need for separate heating and pressing stages. This continuous process achieves high density (95% theoretical density) in just 5-30 minutes, compared to the multi-hour processes required by conventional HIP or HP methods, thereby significantly reducing both time and cost while maintaining high manufacturing precision.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent rushes through the sintering process by applying high energy density electric discharge plasma, achieving complete densification and phase formation in minutes rather than hours. This rapid processing skips the lengthy intermediate stages of conventional methods while still achieving the desired high density and uniform microstructure.

Inventive Principle:
Principle #21Skipping (Rushing through)

3Manufacturing precision

If the conventional powder metallurgy method with HIP or HP is used, then high-density sintered bodies can be obtained, but crystal particulate control is limited due to long molding process time

Engineering Contradiction:
ImprovedensityVSAvoidcrystal particulate control
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent uses precisely controlled sintering parameters (temperature: 1000-1500°C, pressure: 50-70 MPa, time: 5-30 minutes) to achieve both high density and excellent crystal particulate control. The short processing time prevents excessive grain growth while ensuring complete densification, maintaining uniform composition and fine crystal structure that would otherwise deteriorate in longer conventional processes.

Inventive Principle:
Principle #35Parameter changes

4Productivity

If electric discharge plasma sintering is used, then high density and uniform composition can be achieved in short time, but the process requires precise control of temperature and pressure parameters

Engineering Contradiction:
Improveprocessing timeVSAvoidparameter control system
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent incorporates feedback control mechanisms that monitor temperature, pressure, and discharge parameters in real-time during sintering. This feedback system automatically adjusts process conditions to maintain optimal values, enabling precise control of the complex multi-parameter process while achieving high productivity and consistent quality across production batches.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in a molybdenum sputtering target with high density, uniform composition, and high purity, reducing processing costs and time, while minimizing particle growth and maintaining fine crystal structures, suitable for efficient solar cell performance.

Implementation Method 1

electric discharge plasma sintering process

Methodology Applied
Scientific EffectElectric discharge plasma: Plasma

Implementation Method 2

electric discharge plasma sintering process

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 3

vacuum environment

Methodology Applied
Scientific EffectVacuum: Vacuum

Implementation Method 4

electric discharge plasma sintering process

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS9506141B2Method for manufacturing a molybdenum sputtering target for back electrode of CIGS solar cell
Publication Date: 2016.11.29 KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
  • US9506141B2 patent drawing
  • US9506141B2 patent drawing
  • US9506141B2 patent drawing

AI summary

A method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell is provided to minimize thermal activating reaction by employing an electric discharge plasma sintering process. The method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell comprises the steps of: charging molybdenum powder in a mold of graphite material, mounting the mold in a chamber of an electric discharge sintering apparatus, making a vacuum in the chamber, forming the molybdenum powder to the final target temperature while maintaining constant pressure on the molybdenum powder, heating the molybdenum powder in a predetermined heating pattern when reaching the final target temperature, maintaining the final target temperature for 1 to 10 minutes, and cooling the inside of the chamber while maintaining a constant pressure.