MOM Capacitor Parasitic Reduction via Magnetic Intermediary Layer
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Solution Overview
Problem
Parasitic capacitance between metal-oxide-metal (MOM) capacitors and semiconductor substrates degrades the performance of RF transceivers, particularly in resonance circuits, due to the fringing capacitance generated by interdigitated fingers and the proximity to the substrate.
Innovation Solution
Incorporating a magnetic material layer between the semiconductor substrate and the capacitor, which generates a magnetic field that repels charge and reduces parasitic capacitance, thereby mitigating the performance degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If MOM capacitors use capacitance from wiring layers closer to the substrate to increase capacitance per unit area, then the capacitance density is improved, but parasitic capacitance increases and degrades performance
Solution Approach 1:
A magnetic material layer is introduced as an intermediary between the capacitor and the semiconductor substrate. This magnetic material layer modifies the electric field distribution and reduces parasitic capacitance while allowing the capacitor to maintain high capacitance density by utilizing wiring layers closer to the substrate.
2Quantity of substance
If MOM capacitors use fringing capacitance from interdigitated fingers to achieve high capacitance density, then the capacitance per unit area is improved, but parasitic capacitance related to the substrate increases
Solution Approach 1:
The magnetic material layer serves as a mediator that reduces the harmful parasitic capacitance generated by the fringing fields of interdigitated fingers while preserving the useful capacitance density. The magnetic material modifies the field distribution to minimize substrate interaction.
Solution Approach 2:
The magnetic material layer changes the electromagnetic parameters of the structure by introducing magnetic permeability, which alters the electric field distribution and reduces parasitic capacitance while maintaining the capacitance density achieved through interdigitated finger structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic material layer effectively reduces parasitic capacitance, enhancing the tuning range and RF performance of MOM capacitors by altering the electric field distribution and reducing unwanted capacitance between the capacitor and the substrate.
Implementation Method 1
a magnetic material layer between the semiconductor substrate and the capacitor... which generates a magnetic field that repels charge and reduces parasitic capacitance
Data Source
AI summary
A semiconductor device reduces parasitic capacitance between a metal-oxide-metal (MOM)/metal-insulator-metal (MIM) capacitors and a semiconductor substrate. The semiconductor device includes the semiconductor substrate (e.g., a silicon substrate, a III-V compound semiconductor substrate, or a silicon on insulator (SOI) substrate), a magnetic material layer, and a capacitor. The magnetic material layer is between the semiconductor substrate and the capacitor.