Metal Interconnection Layer Capacitance Prediction Model
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Solution Overview
Problem
Conventional methods for modeling metal oxide metal (MOM) capacitors are time-consuming and resource-intensive, requiring extensive testing and data collection for different voltage applications, and are limited by the need for multiple capacitor structures and high process costs, especially for small capacitors.
Innovation Solution
A method and system that uses post simulation tools to extract capacitance data and establish relationships between capacitance values and sizes, temperatures, and voltages, allowing for the creation of a prediction model that can be applied to capacitors of various sizes, reducing the need for extensive testing and shortening the circuit design cycle.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional modeling methods are used to establish MOM capacitor models for different voltages, then accurate capacitance models can be obtained, but the modeling process is time-consuming and resource-consuming
Solution Approach 1:
The patent applies preliminary action by pre-establishing a capacitance prediction model using simulation tools before actual circuit design begins. The model is built in advance using process device simulation tools to extract relationships between capacitance values and geometric parameters, allowing designers to quickly predict capacitance for different configurations without going through the entire conventional modeling process each time.
Solution Approach 2:
The patent uses copying by creating a virtual capacitance prediction model that replicates the behavior of physical MOM capacitors. Instead of repeatedly manufacturing and testing physical capacitors for each design iteration, the simulation model copies the electrical characteristics and allows virtual testing, dramatically reducing time and resource consumption while maintaining prediction accuracy.
2Strength
If different metal widths or structures are selected to form MOM capacitors for different voltage applications, then voltage withstand capability is improved, but device complexity increases
Solution Approach 1:
The patent applies parameter changes by establishing a unified capacitance prediction model that can predict capacitance values for different metal layer configurations, voltages, and geometries through parameter input rather than requiring separate physical models. The model takes parameters such as metal layer thickness, spacing, and area to predict capacitance across different voltage applications, simplifying the design process while maintaining voltage withstand capability.
Solution Approach 2:
The patent implements universality by creating a single capacitance prediction model that serves multiple voltage applications and capacitor configurations. Instead of requiring separate models for different voltage levels, the unified model can predict capacitance for various metal layer combinations and voltage conditions, reducing device complexity while maintaining versatility across different applications.
3Quantity of substance
If the smallest metal spacing is used in MOM capacitor design, then capacitance density is maximized, but the design is limited for high voltage applications
Solution Approach 1:
The patent applies dynamics by creating an adaptive capacitance prediction model that can dynamically adjust predictions based on different metal layer configurations and voltage conditions. The model is not fixed to a single spacing or structure but can evaluate different metal layer combinations, allowing designers to optimize for capacitance density in low-voltage applications while maintaining safety margins for high-voltage applications within the same modeling framework.
Data Source
AI summary
A method and a system for establishing a metal interconnection layer capacitance prediction model are disclosed. The method for establishing the metal interconnection layer capacitance prediction model includes: extracting capacitance data of metal interconnect layer capacitors of different sizes by using a post simulation tool and establishing a relationship formula between capacitance value and size of the metal interconnect layer capacitors; separately extracting relationship data between voltage and capacitance value of the metal interconnect layer capacitors and between temperature and capacitance value of the metal interconnect layer capacitors by using a process device simulation tool, and add the relationship data to the relationship formula; and establishing a simulation model in accordance with the relationship formula of capacitance value, size, voltage and temperature. The method has improved modeling speed and reduced circuit design cycle. The model thereof can be applied to the analysis of the small size capacitors with reliability.