MOM Capacitor Circuit Precision Adjustment via Switch Segmentation

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Solution Overview

Problem

Conventional semiconductor devices face challenges in precisely adjusting the capacitance of capacitors, particularly due to process variations when using MOS or MIM capacitors, which limits their accuracy in achieving predetermined physical quantities.

Innovation Solution

A MOM capacitor circuit is developed with multiple pairs of metal electrodes connected through an insulating film on a substrate, where switch elements control the capacitance by connecting or disconnecting metal electrodes to terminals, allowing for precise adjustment of capacitance through the on/off states of these switch elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If MOS or MIM capacitors are used in conventional semiconductor devices, then the device structure is simpler and manufacturing is easier, but the capacitance adjustment precision is insufficient due to process variations

Engineering Contradiction:
Improvecapacitance adjustment precisionVSAvoidcapacitor structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The capacitor structure is divided into multiple discrete metal electrode segments (first metal electrode, second metal electrode, third metal electrode) that can be independently connected or disconnected through switch elements. This segmentation allows precise control of capacitance by selectively connecting segments in series or parallel, overcoming the precision limitations of conventional MOS/MIM capacitors while maintaining manufacturing feasibility through standardized electrode patterns.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The capacitor configuration is made dynamic through the introduction of switch elements that can change the connection state between metal electrodes based on control signals. This enables the capacitance value to be adjusted between different states (e.g., series connection for lower capacitance, parallel connection for higher capacitance), providing adaptability and precise control that static MOS/MIM capacitors cannot achieve.

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If multiple metal electrodes are added to enable precise capacitance adjustment, then the capacitance control precision improves, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvecapacitance measurement precisionVSAvoidcapacitor manufacturing ease
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

Multiple metal electrodes are merged into a unified capacitor structure where the first, second, and third metal electrodes are positioned in close proximity and connected through shared insulating films and conductive paths. This merging approach allows precise capacitance control through selective connection while maintaining a compact layout that is compatible with standard semiconductor manufacturing processes, avoiding the need for completely separate capacitor structures.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The capacitance value is controlled by changing the connection configuration parameter rather than altering the physical dimensions of the electrodes. By switching between series and parallel connections of the metal electrodes, the effective capacitance can be precisely adjusted without requiring complex electrode geometry variations, simplifying the manufacturing process while maintaining measurement precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the capacitance of MOM capacitors to be adjusted with higher precision compared to conventional methods, facilitating more accurate control of physical quantities in semiconductor devices.

Implementation Method 1

MOM capacitor circuit and semiconductor device thereof... a plurality of capacitors respectively formed by a plurality of pairs of metal electrodes facing each other through an insulating film... the capacitance of the MOM capacitor can be adjusted

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS9484341B2Mom capacitor circuit and semiconductor device thereof
Publication Date: 2016.11.01 POWERCHIP SEMICON MFG CORP
  • US9484341B2 patent drawing
  • US9484341B2 patent drawing
  • US9484341B2 patent drawing

AI summary

A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor can be adjusted with higher precision as compared to the conventional art. The MOM capacitor includes a plurality of MOM (Metal-Oxide-Metal) capacitors respectfully formed by pairs of metal electrodes facing each other through an insulating film on a substrate. The MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor; and at least one switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal, wherein a capacitance of the MOM capacitor circuit is adjusted by turning on/off the switch element.