Monitoring Channel Structure for 3D NAND Layer Misalignment
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Solution Overview
Problem
Existing non-volatile memory devices face challenges in increasing data storage capacity due to misalignment issues during the fabrication of multi-layer channel structures, which can compromise the reliability and stability of the device.
Innovation Solution
Incorporation of monitoring channel structures with specific width configurations to detect misalignment between layers, allowing for efficient monitoring and prevention of misalignment during the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of channel structures is increased to enhance data storage capacity, then the data storage capacity is improved, but the alignment stability between layers deteriorates
Solution Approach 1:
The channel structures are divided into multiple layers stacked vertically, with each layer being a separate fabrication unit. This segmentation allows for standardized manufacturing of individual layers while achieving high overall capacity through stacking, and enables independent alignment monitoring for each layer interface.
Solution Approach 2:
Monitoring channel structures are introduced as intermediary elements between the actual data storage channel structures. These monitoring structures have the same width as the channel structures and serve as reference markers to detect alignment deviations without interfering with the primary data storage function.
2Measurement precision
If monitoring channel structures with same width as channel structures are used, then the alignment detection capability is improved, but the device complexity increases
Solution Approach 1:
The monitoring channel structures share the same design parameters (width, height, material composition) as the actual channel structures, allowing them to serve dual purposes: as alignment reference markers during fabrication and as functional data storage structures in the final device. This universality reduces the need for separate monitoring infrastructure.
Solution Approach 2:
The monitoring channel structures are designed to be homogeneous with the channel structures in terms of dimensions and material properties. This homogeneity ensures that the monitoring structures experience the same fabrication variations and alignment challenges, making them effective reference markers while maintaining structural consistency throughout the device.
Data Source
AI summary
A non-volatile memory device and a non-volatile memory system comprising the same are provided. The non-volatile memory device includes a first stack in which a first conductive pattern and a first dielectric layer are alternately stacked in a first direction on a substrate, a second stack in which a second conductive pattern and a second dielectric layer are alternately stacked in the first direction on the first stack opposite the substrate, a first monitoring channel structure that penetrates the first stack in the first direction, and a second monitoring channel structure that penetrates the second stack in the first direction and is on the first monitoring channel structure. A width of a top of the first monitoring channel structure opposite the substrate is smaller than a width of a bottom of the second monitoring channel structure adjacent the top of the first monitoring channel structure.