Monoalkyl Tin Compounds Low Polyalkyl Contamination Synthesis
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Solution Overview
Problem
Existing methods for synthesizing monoalkyl tin triamides and other monoalkyl tin compounds often result in high polyalkyl tin contamination, which can compromise the purity and performance of semiconductor materials and photoresists.
Innovation Solution
The development of specific synthesis methods for monoalkyl tin triamides, trialkoxides, and triamido tin compounds, which involve reacting alkylating agents with tin tetraamides in organic solvents, followed by further purification techniques such as fractional distillation to reduce polyalkyl tin contaminants to below 4 mole %.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional synthesis methods are used to produce monoalkyl tin compounds, then production efficiency is maintained, but polyalkyl tin contamination exceeds acceptable levels
Solution Approach 1:
The patent applies preliminary action by performing selective alkylation under controlled conditions before contamination occurs. The method uses specific reagents and reaction conditions to pre-establish the desired monoalkyl tin compound structure, preventing polyalkyl formation from the outset rather than attempting to remove contaminants afterward.
Solution Approach 2:
The patent applies extraction by using purification steps to remove polyalkyl tin contaminants from the reaction mixture. The method selectively separates the desired monoalkyl tin compound from polyalkyl byproducts, achieving the required purity level of no more than 4 mole % dialkyl tin compounds.
2Manufacturing precision
If purification steps are added to reduce polyalkyl tin contamination, then product purity improves, but manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by optimizing reaction conditions such as temperature, solvent selection, reagent ratios, and reaction time to maximize selectivity for monoalkyl tin compound formation. These parameter adjustments enable high purity products with minimal additional purification steps, resolving the contradiction between purity and process complexity.
3Reliability
If polyalkyl tin contaminants are reduced to below 4 mole %, then suitability for semiconductor applications is enhanced, but production cost increases
Solution Approach 1:
The patent applies preliminary action by designing the synthesis route to prevent polyalkyl tin contaminant formation from the beginning.通过使用特定的烷基化试剂和反应条件，在反应初期就确保高选择性生成单烷基锡化合物，从而在获得高纯度产品的同时保持高产率，解决了可靠性和产量之间的矛盾。
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These methods effectively produce monoalkyl tin compounds with low polyalkyl tin byproducts, enhancing their purity and suitability as precursors for semiconductor processing and photoresist applications.
Implementation Method 1
reacting an alkylating agent selected from the group consisting of RMgX, R2Zn, RZnNR′2, or a combination thereof, with Sn(NR′2)4 in a solution comprising an organic solvent
Implementation Method 2
The monoalkyl tin triamide can be reacted with an alcohol represented by the formula HOR′′ in an organic solvent to form RSn(OR′′)3
Implementation Method 3
followed by further purification techniques such as fractional distillation to reduce polyalkyl tin contaminants to below 4 mole %
Data Source
AI summary
A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn-(NR′COR″)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are 10 suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.