Monocrystalline Interlayer Wiring for Low-Loss Quantum Chips

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Scaling superconducting quantum devices requires multilevel wiring structures that provide a low-loss microwave environment to support high-fidelity quantum gate operations, which is challenging due to the use of lossy amorphous interlayer dielectrics and limited integration of quantum devices.

Innovation Solution

Fabrication of low-loss multilevel wiring structures using monocrystalline dielectric materials through substrate bonding and thinning techniques, forming low-microwave-loss interlayer dielectric layers to integrate superconducting quantum devices and circuitry.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multilevel wiring structures are implemented to scale quantum devices, then integration density and connectivity are improved, but microwave signal loss increases due to lossy amorphous interlayer dielectrics

Engineering Contradiction:

Improveintegration densityVSAvoidmicrowave signal loss

Core Design Contradiction:

ProductivityVSLoss of energy

Solution Approach 1:

The patent changes the material parameter of the interlayer dielectric from amorphous to monocrystalline structure. This parameter change fundamentally alters the microwave loss characteristics while maintaining the multilevel wiring structure's integration density benefits

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure combining monocrystalline dielectric layers with superconducting metallization layers. This composite approach leverages the low-loss properties of monocrystalline materials while maintaining the superconducting circuit functionality

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If separate fabrication and connection of multilevel wiring structures is used to meet routing requirements, then connectivity is improved, but device complexity and fabrication difficulty increase

Engineering Contradiction:

Improvesignal routing capabilityVSAvoidfabrication complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the quantum device fabrication process with the multilevel wiring structure fabrication into a unified process. The same monocrystalline substrate serves both as the quantum device platform and as the interlayer dielectric for wiring, eliminating separate fabrication and connection steps

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The monocrystalline substrate performs multiple functions: it serves as the base for quantum device fabrication, as the interlayer dielectric for multilevel wiring, and as the structural foundation for integration. This multi-functionality reduces overall system complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS20260013403A1Multilevel wiring structures for superconducting quantum devices

Publication Date: 2026.01.08 INTERNATIONAL BUSINESS MACHINE CORPORATION

AI summary

A method is provided for fabricating a multilevel wiring structure. A first metallization layer comprising a superconducting metal is formed in a surface of a first substrate. A second substrate is bonded to the first substrate. The second substrate comprises a monocrystalline dielectric material. The second substrate is thinned to form an interlayer dielectric layer which comprises the monocrystalline dielectric material. A second metallization layer comprising a superconducting metal is formed in a surface of the interlayer dielectric layer. The second metallization layer is connected to the first metallization layer by at least one interlayer via in the interlayer dielectric layer.