Monocrystalline Silicon Display Substrate Integration

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Solution Overview

Problem

Current Gate Driver On Array (GOA) technologies face challenges in integrating both scan and data drive circuits into the array substrate due to the complexity of data drive circuits, which occupy large areas and do not meet performance requirements, leading to a squeezed display area and the need for separate integration of scan drive circuits and data drive circuits on the same substrate.

Innovation Solution

The use of a monocrystalline silicon substrate with transistors formed in the active region, allowing for the integration of both scan and data drive circuits within the array substrate, reducing transistor size and area occupation while maintaining high performance, thereby expanding the display area and reducing the device size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If data drive circuits are integrated into the array substrate using conventional GOA technology, then circuit integration is achieved, but the data drive circuits occupy large areas and do not meet performance requirements

Engineering Contradiction:
Improvecircuit integration capabilityVSAvoidcircuit performance
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent changes the fundamental material parameter from amorphous silicon to monocrystalline silicon, which fundamentally alters the electrical properties and carrier mobility of the transistors. This parameter change enables the data drive circuits to achieve high performance while being integrated into the array substrate, resolving the contradiction between integration capability and circuit performance.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If data drive circuits are integrated into the array substrate, then manufacturing complexity is reduced, but the occupied area increases and display area is squeezed

Engineering Contradiction:
Improvemanufacturing process integrationVSAvoiddisplay area
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

By changing the material parameter to monocrystalline silicon, the transistor size is dramatically reduced due to superior carrier mobility. This enables the data drive circuits to occupy minimal area on the substrate, allowing full integration without squeezing the display area, thus resolving the contradiction between manufacturing integration and display area.

Inventive Principle:
Principle #35Parameter changes

3Area of stationary object

If monocrystalline silicon is used as the base substrate, then transistor size is reduced and display area is expanded, but the manufacturing process complexity increases

Engineering Contradiction:
Improvedisplay areaVSAvoidmanufacturing process complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent divides the substrate into distinct functional regions: a monocrystalline silicon base substrate for the data drive circuits and a separate array region for the pixel circuits. This segmentation allows each region to be optimized independently, enabling the use of monocrystalline silicon without excessively complicating the overall manufacturing process, thus resolving the contradiction between display area expansion and manufacturing complexity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the simultaneous integration of scan and data drive circuits on the array substrate, increasing the display area, reducing device size, and improving display resolution without compromising circuit performance or pixel count.

Implementation Method 1

a base substrate, comprising a monocrystalline silicon layer, a thickness of the monocrystalline silicon layer being less than that of the base substrate; an array circuit layer, disposed on the base substrate and comprising a plurality of transistors, each of which has an active layer inside the monocrystalline silicon layer

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11600234B2Display substrate and driving method thereof
Publication Date: 2023.03.07 ORDOS YUANSHENG OPTOELECTRONICS
  • US11600234B2 patent drawing
  • US11600234B2 patent drawing
  • US11600234B2 patent drawing

AI summary

A display substrate and a driving method thereof are provided. The display substrate includes a base substrate containing a monocrystalline silicon layer, a thickness of the monocrystalline silicon layer being less than that of the base substrate; an array circuit layer, disposed on the base substrate and including a plurality of transistors, each of which has an active layer inside the monocrystalline silicon layer; and a plurality of light-emitting elements, located at a side of the array circuit layer away from the base substrate. The array circuit layer includes a scan driving circuit, a data driving circuit and a plurality of pixel sub-circuits, and the plurality of pixel sub-circuits are connected to the plurality of light-emitting elements, respectively, to form a plurality of sub-pixels.