Monolithic Active-Passive Waveguide Photonic System
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Solution Overview
Problem
The integration of high-quality III-V semiconductor material waveguides on a silicon photonics platform is challenging due to manufacturing and alignment issues, which affects the efficiency of light generation, amplification, and modulation in photonic systems.
Innovation Solution
A monolithic integrated active/passive waveguide photonic system is developed, where III-V semiconductor waveguides are monolithically integrated with silicon waveguides, allowing for evanescent wave coupling between non-overlapping portions, and III-V nanoridge structures are grown within trenches to minimize defects and enhance coupling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If III-V semiconductor waveguides are integrated with silicon waveguides using overlapping configurations, then coupling efficiency is improved, but manufacturing complexity and alignment precision requirements increase significantly
Solution Approach 1:
The patent transitions from lateral overlap coupling to vertical evanescent coupling by growing III-V nanoridge structures vertically on silicon waveguides. This dimensional change allows coupling through the vertical interface without requiring precise lateral alignment, thus maintaining coupling efficiency while reducing manufacturing complexity
Solution Approach 2:
The III-V nanoridge structures are grown directly on top of the silicon waveguide structures, creating a nested configuration where the active III-V material is positioned vertically above the passive silicon waveguide. This nesting enables efficient evanescent coupling while simplifying the manufacturing process
2Ease of manufacture
If III-V semiconductor material is grown directly on silicon substrate, then monolithic integration is achieved, but defect density increases due to lattice mismatch
Solution Approach 1:
The patent segments the III-V structure into nanoridge formations grown within defined regions on the silicon substrate. This segmentation allows controlled growth that minimizes defect propagation while maintaining monolithic integration, as the nanoridge geometry confines the III-V material in a way that reduces the impact of lattice mismatch
Solution Approach 2:
The patent applies local quality by creating specific nanoridge structures with controlled dimensions and orientations in critical coupling regions. This localized structuring optimizes the interface quality between III-V and silicon materials, reducing defect density in the most critical areas while maintaining overall monolithic integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient coupling and minimizes propagation losses, achieving better light generation and absorption efficiencies while allowing for the integration of active and passive functions on a single platform, with low resistance contacts and optimized waveguide configurations.
Implementation Method 1
each of the active waveguide and the passive waveguide being positioned so it does at least partly not overlap with the other waveguide both in height direction as in lateral direction with respect to the substrate in a non-overlapping portion. The waveguides are positioned so that at least part of the evanescent wave coupling occurs between the waveguides at the non-overlapping portion.
Data Source
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AI summary
The present invention relates to a monolithic integrated active/passive waveguide photonic system, the system comprising a substrate with positioned thereon at least one active waveguide and at least one passive waveguide. The active waveguide and passive waveguide being monolithic integrated and being arranged for evanescent wave coupling between the waveguides, each of the active waveguide and the passive waveguide being positioned so it does at least partly not overlap with the other waveguide both in height direction as in lateral direction with respect to the substrate.