Monolithic III-Nitride Power Transistor and Schottky Diode Integration
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Solution Overview
Problem
Existing III-nitride power semiconductor devices have a large footprint and complex manufacturing due to being discrete devices, and the undoped second III-nitride semiconducting layer in monolithic integrated devices is not suited for Schottky diodes requiring low current resistance.
Innovation Solution
A monolithic semiconductor structure with a stack of layers including a substrate, a first III-nitride layer, and a second III-nitride layer, where the second layer is doped to create a conducting region for the Schottky diode, allowing for a hetero-junction power transistor and Schottky diode integration with reduced leakage current and low on-state resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If discrete III-nitride power semiconductor devices are used, then device performance is achieved, but circuit footprint and manufacturing complexity increase
Solution Approach 1:
The patent merges multiple discrete power semiconductor devices into a single monolithic integrated structure. The hetero-junction power transistor and Schottky diode are combined in one device with shared layers and electrodes, eliminating the need for separate discrete components and reducing circuit footprint and manufacturing complexity.
Solution Approach 2:
The second III-nitride layer serves multiple functions simultaneously: it forms part of the hetero-junction for the power transistor while also providing the conducting region for the Schottky diode. This multi-functionality reduces the total number of layers and components needed in the device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the manufacturing of compact, efficient III-nitride power devices with reduced leakage current and low on-state resistance, improving the integration and performance of power transistors and Schottky diodes.
Implementation Method 1
the second III-nitride layer, which is doped to form a conducting region in a region underlying the Schottky electrode
Implementation Method 2
a hetero-junction III-nitride body having a first III-nitride semiconductor layer and a second III-nitride semiconductor layer having a band gap different from that of the first III-nitride layer
Implementation Method 3
a Schottky electrode is present which is in Schottky contact with the second III-nitride layer
Data Source
AI summary
A monolithic semiconductor structure includes a stack of layers. The stack includes a substrate; a first layer made from a first semiconductor material; and a second layer made from a second semiconductor material. The first layer is situated between the substrate and the second layer and at least one of the first semiconductor material and the second semiconductor material contains a III-nitride material. The structure includes a power transistor, including a body formed in the stack of layers; a first power terminal at a side of the first layer facing the second layer; a second power terminal at least partly formed in the substrate; and a gate structure for controlling the propagation through the body of electric signals between the first power terminal and the second power terminal. The structure further includes a vertical Schottky diode, including: an anode; a cathode including the substrate, and a Schottky barrier between the cathode and the anode, the Schottky barrier being situated between the substrate and a anode layer in the stack of layers.