Monolithic Micro LED Display Subpixel Isolation
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Solution Overview
Problem
Micro LED display manufacturing faces challenges with electrical connection defects and bonding instability due to thermal mismatch, particularly in achieving high-resolution displays with low power consumption and environmental friendliness.
Innovation Solution
A display apparatus comprising a support substrate, a driving layer with a driving element, and a light-emitting layer with a semiconductor structure, including a first and second semiconductor layer, an active layer, and an isolation structure to divide light into subpixels, along with a bonding layer and electrodes for efficient power application and light emission, which are monolithically manufactured to improve electrical connection and reduce subpixel size for higher resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If micro LED displays are manufactured by bonding drivers to LEDs, then high-resolution display with low power consumption is achieved, but electrical connection defects occur and bonding instability happens due to thermal mismatch
Solution Approach 1:
The patent merges the driver layer and LED layer into a single monolithic structure grown on one substrate, eliminating the need for separate bonding processes. This integration resolves the thermal mismatch problem by ensuring uniform thermal expansion characteristics throughout the entire device structure, while maintaining high-resolution display capabilities and low power consumption.
Solution Approach 2:
The patent introduces a buffer layer as an intermediary between the substrate and the active device layers. This buffer layer serves as a thermal and mechanical transition zone that accommodates differential thermal expansion between the substrate and the LED/driver structures, preventing bonding instability while enabling high-resolution display performance.
2Measurement precision
If micro LED displays are manufactured by bonding drivers to LEDs, then high-resolution display with low power consumption is achieved, but electrical connection defects occur
Solution Approach 1:
The patent combines the driver transistors and LED structures into a single monolithic integrated device grown epitaxially on the substrate. This integration eliminates separate bonding interfaces that cause electrical connection defects, while maintaining the ability to achieve high-resolution displays through precise control of the epitaxial growth process and device geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances electrical connection characteristics, increases luminous efficiency, and improves resolution by preventing current spread to adjacent subpixels and eliminating the need for mesa etching, resulting in a high-resolution display with improved light efficiency and internal quantum efficiency.
Implementation Method 1
a light-emitting layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer provided on the driving layer
Implementation Method 2
The pixel electrode may be configured to reflect light emitted from the active layer
Data Source
AI summary
Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.