Monolithic Image Chip Nanowire LED Multi-Color Emission
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Solution Overview
Problem
Multi-color LED arrays face challenges in controlling and selectively activating different emission wavelengths from the same nanowire LED, leading to difficulties in achieving precise color control and efficient light emission.
Innovation Solution
The development of a semiconductor structure with nanowires having distinct active regions and growth templates, where the spacing and geometry of the growth templates differ, allowing for simultaneous growth of LEDs with different peak emission wavelengths, enabling the creation of an image chip with emissive subpixels of various colors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If nanowire LEDs are used to emit different color light from different portions of the same nanowire, then multi-color emission is achieved, but it becomes difficult to control and selectively activate the different emission wavelengths
Solution Approach 1:
The patent divides the nanowire structure into separate, independent nanowires where each nanowire is dedicated to a specific emission wavelength. Instead of having multiple emission regions within a single nanowire, the invention creates distinct nanowires with different active region compositions (e.g., different InGaN quantum well compositions) that emit different colors. This segmentation enables independent control of each nanowire through separate contact structures, resolving the control difficulty while maintaining multi-color emission capability.
2Manufacturing precision
If the active region includes quantum wells with varying indium incorporation to achieve different wavelengths, then wavelength control is improved, but the manufacturing complexity increases due to precise composition control requirements
Solution Approach 1:
The patent implements local quality by creating nanowires with spatially varying compositions tailored to specific wavelength requirements. Each nanowire's active region contains quantum wells with specific indium gallium nitride compositions optimized for its intended emission wavelength. This local optimization of material composition at each nanowire location enables precise wavelength control while the modular nanowire architecture simplifies the overall manufacturing process compared to attempting to control multiple wavelengths within a single complex structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of LED arrays that can emit light of multiple colors, such as red, green, and blue, allowing for full-color image display with improved color accuracy and efficiency by controlling the indium incorporation in quantum wells based on template geometry and growth conditions.
Implementation Method 1
a first light emitting device containing a first nanowire located on a substrate, the first nanowire including a first active region... a second light emitting device containing a second nanowire located on the substrate, the second nanowire including a second active region
Implementation Method 2
forming a growth mask having a first aperture in a first area and a second aperture in a second area on a substrate, forming a first nanowire through the first aperture
Data Source
AI summary
A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.