Monolithic Optical Transformer With Vertically Stacked LED-PD Coupling
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Solution Overview
Problem
Existing opto-couplers face inefficiencies due to optical losses associated with transitions between dielectric media with different refractive indices, limiting their quantum efficiency and power transfer capabilities.
Innovation Solution
A monolithic optical device is developed, integrating a light-emitting diode (LED) and a photodiode (PD) in a single semiconductor die, with a semi-insulating layer or tunnel junction separating them, allowing for vertical stacking and reduced optical losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If separate LED and photodiode devices are used in conventional opto-couplers, then device functionality is achieved, but optical losses occur due to transitions between dielectric media with different refractive indices
Solution Approach 1:
The patent merges the LED and photodiode into a single monolithic semiconductor device, integrating both light emission and detection functions within the same die. This eliminates the optical transitions between separate dielectric media that cause energy losses, directly resolving the contradiction between reducing optical losses and maintaining device functionality.
Solution Approach 2:
The patent transitions from a lateral arrangement of separate LED and photodiode devices to a vertical stacking configuration within a single monolithic structure. This dimensional change enables direct optical coupling between the LED active region and photodiode active region, eliminating refraction losses at interfaces while maintaining electrical isolation through the semi-insulating layer.
2Loss of energy
If a monolithic structure is used to eliminate optical losses, then quantum efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The monolithic semiconductor structure is segmented into distinct functional regions including the LED active region, semi-insulating layer, and photodiode active region. This segmentation allows each region to be optimized for its specific function while maintaining a unified monolithic structure that can be manufactured using standard semiconductor fabrication processes.
Solution Approach 2:
A semi-insulating layer is introduced as an intermediary between the LED and photodiode regions. This layer provides electrical isolation to prevent carrier leakage while maintaining optical transparency to allow efficient light transmission from the LED to the photodiode, thus improving quantum efficiency without compromising manufacturability.
3Loss of energy
If vertical stacking of LED and photodiode junctions is implemented, then optical coupling efficiency is enhanced, but device fabrication difficulty increases
Solution Approach 1:
The patent implements local quality by creating distinct regions with specific properties within the monolithic structure: the LED active region is optimized for light emission, the semi-insulating layer provides electrical isolation with optical transparency, and the photodiode active region is optimized for light detection. This localized optimization enables efficient vertical optical coupling while maintaining manufacturability through standard fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the overall quantum efficiency of the opto-coupler, enabling the transfer of larger power quantities and broader functionality by minimizing internal optical losses.
Implementation Method 1
a light-emitting diode (LED) junction
Implementation Method 2
a photo diode (PD) junction
Data Source
AI summary
Provided are optical transformer devices having a high power efficiency. The device architecture provides uniform current spreading to minimize efficiency droop. The quantum well designs are optimized for both light-emitting diode (LED) and photo diode (PD) operation. A low-loss optical cavity allows efficient transfer of light from the LED junction to the PD junction. The architecture provides a low-loss voltage up- and down-conversion and provides compatibility with production-grade epitaxial growth and wafer fabrication processes.


