Monolithic Power Converter Driver with Integrated Overcurrent Protection
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Solution Overview
Problem
Group III-V power transistors, such as III-Nitride HEMTs, are susceptible to damage from overcurrent conditions and short circuit loads, which can lead to catastrophic failure, and conventional solutions for overcurrent protection in enhancement mode functionality require hybrid assemblies and multiple dies, precluding monolithic integration of multiple transistors on a single semiconductor chip.
Innovation Solution
A power converter with an integrated driver IC that includes a monolithically integrated overcurrent protection circuit, using low voltage group IV devices like silicon MOSFETs, cascoded with a depletion mode group III-V transistor to operate as an enhancement mode transistor, allowing for monolithic integration of high-side and low-side transistors on a single chip and reducing parasitic inductances and capacitances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional overcurrent protection solutions are used for group III-V transistors, then overcurrent protection is provided, but hybrid assemblies and multiple dies are required, precluding monolithic integration
Solution Approach 1:
The patent merges the overcurrent protection circuit with the power converter circuit onto a single semiconductor chip. The current sensing circuit is integrated with the driver circuitry, eliminating the need for separate hybrid assemblies and multiple dies. This monolithic integration maintains overcurrent protection functionality while simplifying the device structure.
2Power
If group III-V transistors are used in high power switching applications, then high power capability is achieved, but susceptibility to overcurrent damage increases
Solution Approach 1:
The patent implements preliminary overcurrent detection by sensing the current through the group III-V transistor before it can reach damaging levels. The integrated current sensing circuit continuously monitors the current and activates protection mechanisms in advance, preventing shoot-through currents and short circuit damage while allowing the transistor to operate at high power levels.
3Reliability
If multiple dies are used for overcurrent protection, then protection functionality is achieved, but package size increases
Solution Approach 1:
The patent combines the overcurrent protection circuitry with the main power converter circuit onto a single monolithic semiconductor chip. By integrating the current sensing circuit, driver circuitry, and power transistor control functions on one chip, the patent eliminates the need for multiple separate dies and reduces the overall package size while maintaining full overcurrent protection functionality.
Data Source
AI summary
In one implementation, a power converter includes an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V transistor, and a driver IC in a group IV die. The driver IC is configured to drive the output stage IC. In addition, a group IV control switch in the group IV die is cascoded with the depletion mode group III-V transistor. The power converter further includes an overcurrent protection circuit for the depletion mode group III-V transistor, the overcurrent protection circuit monolithically integrated in the group IV die.