Monolithic Semiconductor Package Integrating Power Devices
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Solution Overview
Problem
Current semiconductor packages face limitations in integration due to separate configuration of driving circuits, low-side output power devices, and high-side output power devices, which restricts miniaturization and increases size, weight, and production costs.
Innovation Solution
A semiconductor package design that integrates a monolithic die with a driving circuit, low-side output power device, and high-side output power device, where the low-side output power device is a bottom-source type LDMOS, and the high-side output power device is isolated, with a lower electrode connected to the power ground and upper electrode connected to input and switching nodes, using lead frames and a copper clip for electrical connections, and encapsulated with a heat sink for thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If driving circuit, low-side output power device, and high-side output power device are configured in separate semiconductor dies, then ease of manufacture is improved, but device complexity increases and integration is limited
Solution Approach 1:
The patent merges the driving circuit, low-side output power device, and high-side output power device into a single monolithic semiconductor die. This integration eliminates the need for separate dies and reduces the number of packaging steps, thereby improving ease of manufacture while reducing device complexity through unified structure.
Solution Approach 2:
The monolithic die serves multiple functions simultaneously by integrating the driving circuit and both output power devices in one structure. This multi-functional design simplifies the overall system architecture and reduces the complexity associated with managing multiple separate components.
2Ease of manufacture
If separate semiconductor dies are used for driving circuit and power devices, then manufacturing process is simpler, but size and weight of the package increase
Solution Approach 1:
By combining all functional components into one monolithic die, the patent eliminates the need for multiple separate packages and mounting structures. This integration significantly reduces the overall weight of the stationary object while maintaining manufacturing simplicity through a unified fabrication process.
3Ease of manufacture
If standard die with exposed pad is used, then ease of manufacture is improved, but thermal resistance increases and heat dissipation is inefficient
Solution Approach 1:
The patent inverts the conventional approach by making the back-side metal layer serve as a power electrode that carries high current, rather than merely being a thermal electrode. This inversion enables the exposed pad to function dual-purpose for both thermal management and electrical current carrying, thereby reducing thermal resistance while maintaining ease of manufacture.
4Device complexity
If driving circuit, low-side output power device, and high-side output power device are integrated in monolithic die, then device complexity is reduced and integration is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent integrates multiple functional components into a monolithic die using standard semiconductor fabrication processes. This merging approach reduces device complexity while managing manufacturing precision requirements through established manufacturing techniques that ensure accurate positioning and interconnection of integrated components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances efficiency, reduces parasitic capacitance and inductance, improves thermal resistance, and allows for smaller die size and lower costs, while enabling efficient current flow and heat dissipation, thus addressing the integration and miniaturization challenges in semiconductor packages.
Implementation Method 1
a heat sink configured to dissipate heat generated inside the semiconductor package to outside
Implementation Method 2
a heat sink configured to dissipate heat generated inside the semiconductor package to outside
Data Source
AI summary
Provided are a semiconductor die and a semiconductor package. The semiconductor package includes: a monolithic die; a driving circuit, a low-side output power device, and a high-side output power device disposed in the monolithic die; and an upper electrode and a lower electrode disposed above and below the monolithic die.