Monolithic VCSEL Opto-isolators for High-Speed Signal Isolation

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Solution Overview

Problem

Conventional opto-isolators using LEDs are limited by slow response time and low current transfer ratio, leading to limitations in high-speed applications and are prone to optical misalignment, making them unsuitable for modern electronic circuit designs requiring efficient noise reduction and isolation.

Innovation Solution

The use of a vertical cavity surface emitting laser (VCSEL) diode with a monolithically integrated photodiode and reflective surfaces for improved optical coupling, enabling higher speed, lower power dissipation, and enhanced current transfer ratio, along with simplified manufacturing and packaging options.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional LEDs are used in opto-isolators, then the device structure is simple and manufacturing is easy, but the response time is slow and current transfer ratio is low

Engineering Contradiction:
Improveresponse timeVSAvoiddevice structure
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent merges the LED emitter and photodiode receiver into a single monolithic semiconductor structure, where both components are fabricated on the same substrate using integrated semiconductor processing techniques. This integration enables faster response times through reduced optical path length and improved coupling efficiency, while the standardized monolithic fabrication process keeps manufacturing complexity manageable through batch processing

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the operating parameters by using a vertical-cavity surface-emitting laser (VCSEL) structure instead of conventional lateral LEDs, enabling operation at higher frequencies with response times in the gigahertz range. The monolithic integration also optimizes the optical coupling parameters between emitter and receiver, significantly improving current transfer ratio while maintaining compatibility with standard semiconductor manufacturing processes

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If conventional opto-isolators are used, then power dissipation is low, but current transfer ratio is limited

Engineering Contradiction:
Improvepower dissipationVSAvoidcurrent transfer ratio
Core Design Contradiction:
Loss of energyVSProductivity

Solution Approach 1:

The monolithic integration of VCSEL and photodiode on the same substrate creates extremely close optical coupling with minimal optical path length, maximizing the transfer of optical energy from emitter to receiver. This tight integration improves current transfer ratio by reducing optical losses while the VCSEL's efficient cavity structure minimizes electrical power dissipation through resonant optical feedback

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the emitter structure to a VCSEL with vertical optical cavity, which improves wall-plug efficiency by confining optical modes within the active region and reducing carrier leakage. This parameter change enables higher current transfer ratios at lower power dissipation levels compared to conventional lateral LED structures

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If separate mounting of LED and photodiode is used, then manufacturing is flexible, but optical misalignment occurs

Engineering Contradiction:
Improveoptical alignmentVSAvoidmanufacturing process
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent combines the fabrication of VCSEL and photodiode into a single monolithic semiconductor manufacturing process, where both components are defined and positioned relative to each other through standard photolithography and etching steps. This integration eliminates optical misalignment issues by ensuring precise geometric registration through mask-aligned fabrication, while the process remains compatible with existing semiconductor manufacturing infrastructure

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent performs preliminary positioning of the photodiode relative to the VCSEL during the semiconductor fabrication process itself, using the substrate and underlying layers as alignment references. This preliminary action ensures precise optical alignment is built into the structure during manufacturing, eliminating the need for subsequent complex alignment operations

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides opto-isolators with increased speed capabilities, improved response time, and better current transfer ratios, addressing the limitations of conventional opto-isolators and enabling their use in high-speed applications such as optical communications and computing.

Implementation Method 1

When an electrical signal is applied to the input of the opto-isolator, the LED generates a light signal

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

an optical receiver generates a corresponding electrical signal as the output. When a photodiode is used as the optical receiver, the output current is proportional to the amount of incident light supplied by the LED

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 3

at least one reflective surface configured to optically couple the VCSEL with the photodiode

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS8785897B2Monolithic opto-isolators
Publication Date: 2014.07.22 II VI DELAWARE INC
  • US8785897B2 patent drawing
  • US8785897B2 patent drawing
  • US8785897B2 patent drawing

AI summary

Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an axis of optical signal transmission of the VCSEL is substantially parallel to an axis of optical signal reception by the photodiode.