Monomer Hardmask Composition for Vertical Pattern Etch Resistance
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in forming fine patterns with excellent profiles due to limitations in hardmask layers, which lack sufficient heat resistance, chemical resistance, and etch resistance, especially when using spin-on coating methods.
Innovation Solution
A monomer represented by specific chemical formulas is used to create a hardmask composition that includes a solvent, allowing for improved solubility, gap-fill characteristics, and cross-linking reactions, resulting in a hardmask layer with enhanced mechanical, heat, and chemical resistance, and etch resistance, even when heat-treated at relatively low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional hardmask materials are used, then the manufacturing process is simple, but the heat resistance, chemical resistance, and etch resistance are insufficient
Solution Approach 1:
The patent uses a copolymer composed of a first monomer unit (providing backbone structure) and a second monomer unit (providing functional groups for cross-linking). This composite structure combines the mechanical strength of the backbone with the chemical reactivity of functional groups, achieving high heat resistance, chemical resistance, and etch resistance while maintaining processability
Solution Approach 2:
The patent controls the molecular weight of the copolymer within a specific range (10,000 to 100,000) and adjusts the ratio of monomer units to optimize the balance between solubility (for spin-on coating) and cross-linking reactivity (for forming resistant hardmask layer). This parameter optimization enables the material to transition from a soluble state during coating to an insoluble cross-linked state after baking
2Reliability
If high cross-linking density is achieved, then etch resistance improves, but pattern profile verticality may be compromised
Solution Approach 1:
The patent introduces bulky side chains (such as tert-butyl groups) at specific positions on the aromatic rings of the monomer units. These localized structural modifications create internal stress that counteracts the compressive stress from cross-linking, preventing pattern collapse and maintaining vertical profiles while still achieving high cross-linking density for etch resistance
3Reliability
If high molecular weight polymer is formed, then cross-linking characteristics improve, but solubility for spin-on coating may decrease
Solution Approach 1:
The patent designs the copolymer with sufficient solubility in the spin-on coating state (before baking) by controlling molecular weight and introducing solubilizing groups. The cross-linking reaction is then triggered by thermal energy during the baking process, transforming the material from a soluble to an insoluble state. This preliminary solubility enables easy coating before the cross-linking transformation occurs
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition effectively forms high molecular weight polymers with excellent cross-linking characteristics, providing vertical pattern formation and maintaining resistance to etching processes, as demonstrated by reduced thickness decrease rates and vertical pattern profiles.
Implementation Method 1
allowing for improved solubility, gap-fill characteristics, and cross-linking reactions, resulting in a hardmask layer with enhanced mechanical, heat, and chemical resistance
Implementation Method 2
heat-treating the hardmask composition to form a hardmask layer
Data Source
AI summary
A monomer for a hardmask composition is represented by the following Chemical Formula 1,