Monomer Sacrificial Liftoff Patterning Without Chemical Etchants
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Solution Overview
Problem
Conventional patterning processes for microelectronic devices rely on harsh chemical etchants and photolithography, which can be damaging to materials and increase the risk of chemical incompatibility.
Innovation Solution
A method that uses a sacrificial monomer material, which undergoes physical changes like melting and evaporation or sublimation to create patterns on a layer without the need for chemical etchants or photolithography, allowing for gentle and chemical-free patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography and chemical etchants are used for patterning, then pattern formation is achieved, but material damage and chemical incompatibility increase
Solution Approach 1:
The patent extracts and removes the harmful chemical etchants and photolithography processes from the patterning system, replacing them with a physical vapor deposition approach using monomer-based sacrificial material that can be removed by simple thermal evaporation or sublimation, thereby eliminating chemical incompatibility and material damage while maintaining pattern formation precision
Solution Approach 2:
The patent changes the physical parameters of the sacrificial material from polymer to monomer form, which fundamentally alters the removal mechanism from chemical etching to physical evaporation/sublimation. This parameter change enables the sacrificial material to be removed without harsh chemicals, resolving the contradiction between achieving precise patterns and avoiding material damage
2Manufacturing precision
If polymer-based sacrificial material is used, then pattern definition is achieved, but removal requires harsh chemical etchants
Solution Approach 1:
The patent changes the molecular structure parameter of the sacrificial material from polymer chains to individual monomer molecules. This parameter change fundamentally simplifies the removal process, allowing the monomer-based sacrificial material to be evaporated or sublimated under vacuum without requiring harsh chemical etchants, thereby improving ease of manufacture while maintaining precise pattern definition
Solution Approach 2:
The patent substitutes the chemical removal mechanism (using harsh etchants to chemically degrade polymer sacrificial material) with a physical removal mechanism (thermal evaporation or sublimation of monomer sacrificial material in vacuum). This substitution eliminates the need for complex chemical processing while maintaining precise pattern definition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the risk of material damage and contamination, achieving precise pattern formation while avoiding the use of harsh chemicals and photolithography processes.
Implementation Method 1
The plurality of islands of the sacrificial material are evaporated and/or sublimated
Implementation Method 2
The plurality of islands of the sacrificial material are evaporated and/or sublimated
Implementation Method 3
The plurality of islands of the sacrificial material are evaporated and/or sublimated
Data Source
AI summary
A method includes forming a plurality of islands of first material on a plurality of first sections of a layer. A plurality of second sections of the layer are not covered by the first material. The method further includes depositing a second material on (i) the islands of first material and (ii) the second sections of the layer that are not covered by the islands of first material. The method further includes evaporating and/or sublimating the islands of first material and removing remnants of the second material that were on the islands of the first material. In an example, the second material remains on the second sections of the layer, to thereby form a pattern of the second material on the layer. In an example, the first material is a monomer, and the second material is a conductor or a dielectric or a semiconductor.