Mononuclear Bisamidate Dicarbonyl Complexes for Low-Temperature CVD
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Solution Overview
Problem
Existing bisamidinate dicarbonyl ruthenium complexes require high evaporation temperatures for CVD or ALD processes, leading to potential decomposition and impurities, and lack stability in air and water, making them unsuitable for high-purity ruthenium layer deposition in semiconductor manufacturing.
Innovation Solution
Development of mononuclear bisamidate dicarbonyl ruthenium complexes with specific ligands (Ru(CO)[OC(R1)NR2]2, where R1 and R2 can be various alkyl groups, allowing evaporation at lower temperatures (100-200°C) without decomposition and producing high-purity ruthenium layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing bisamidinate dicarbonyl ruthenium complexes are used for CVD or ALD processes, then ruthenium layers can be deposited, but high evaporation temperatures are required causing decomposition and impurities
Solution Approach 1:
The patent modifies the ligand structure by changing from bisamidinate to bisamidate configuration, which fundamentally alters the thermal decomposition behavior. This structural parameter change enables the complex to evaporate at lower temperatures (100-200°C) without decomposition, directly resolving the contradiction between achieving high-purity layers and requiring high evaporation temperatures.
Solution Approach 2:
The invention creates a new class of composite molecular structure combining ruthenium center with specific bisamidate ligands (OC(R1)NR2 groups). This composite molecular design provides both volatility at low temperatures and thermal stability during deposition, eliminating the decomposition issue that plagues existing complexes.
2Reliability
If existing bisamidinate dicarbonyl ruthenium complexes are used, then ruthenium layers can be formed, but the complexes lack stability in air and water
Solution Approach 1:
The ligand modification from bisamidinate to bisamidate configuration fundamentally changes the chemical stability properties. The new ligand structure with OC(R1)NR2 groups provides enhanced resistance to air and water, making the complex suitable for practical semiconductor manufacturing processes where air exposure and moisture are inevitable.
3Stability of the object's composition
If high evaporation temperatures are used to ensure thermal stability, then decomposition is prevented, but the volatility required for CVD/ALD processes is reduced
Solution Approach 1:
The patent achieves a remarkable decoupling of volatility and thermal stability through ligand structure modification. The bisamidate configuration allows the complex to maintain volatility at low temperatures (100-200°C) while simultaneously providing thermal stability during the deposition process, eliminating the trade-off between these two properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new complexes enable deposition of pure ruthenium layers on semiconductor substrates with minimal impurities, maintaining thermal stability and volatility, suitable for CVD and ALD processes.
Implementation Method 1
These novel mononuclear bisamidate dicarbonyl complexes of ruthenium can be evaporated without decomposition at the lowest possible temperature at atmospheric pressure, particularly in the range of 100 to 200°C
Implementation Method 2
the ruthenium compounds to be detected should decompose to metallic ruthenium or lead to the formation of a ruthenium oxide layer, either by thermal treatment at temperatures above the boiling point in the case of a CVD process
Implementation Method 3
an ALD process is a method in which the vapor of a precursor is pulsed sequentially and alternately with a co-reactant from a heated reservoir under reduced pressure conditions (0.01–10 mbar) into a reactor chamber. There, on the contact surfaces of a substrate, such as contact surfaces of a semiconductor substrate, which are heated to a temperature, for example, in the range of >50 to 300 °C, a layer is formed through self-limiting chemical surface reactions
Data Source
Figure 1
AI summary
Mononuclear bisamidate dicarbonyl complexes of ruthenium selected from the group consisting of compounds of formula Ru(CO)2[OC(R1)NR2]2, wherein the R1 groups are selected from -H, methyl, ethyl, propyl, isopropyl, cyclopropyl and isomeric butyl groups, wherein the R2 groups are selected from methyl, ethyl, propyl, isopropyl, cyclopropyl and isomeric butyl groups, wherein the R1 and R2 groups may be the same or different.