MoO2Cl2 Semiconductor Deposition With Hydrogen Halide Reduction

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Solution Overview

Problem

The deposition speed of metal-containing layers in semiconductor devices is slow, and oxygen impurities in these layers affect the electrical characteristics and reliability of the devices, particularly when using chemical vapor deposition (CVD) or atomic layer deposition (ALD).

Innovation Solution

A method involving the simultaneous or sequential supply of molybdenum dichloride dioxide (MoO2Cl2) precursors and a hydrogen halide reducing agent, along with hydrogen gas, to form a metal-containing layer, utilizing purge gases to enhance deposition speed and remove impurities, and employing plasma states for further enhancement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional CVD or ALD methods are used to deposit metal-containing layers, then the deposition process can be performed, but the deposition speed is slow and oxygen impurities are incorporated into the metal-containing layer

Engineering Contradiction:

Improvedeposition speedVSAvoidelectrical characteristics

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent changes the chemical parameters of the deposition process by using MoO2Cl2 as a precursor and introducing hydrogen halide reducing agents. This chemical parameter change enables faster deposition speeds while simultaneously reducing oxygen impurity incorporation, resolving the contradiction between productivity and reliability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces hydrogen halide (HF, HCl, HBr) as an intermediary reducing agent that mediates between the metal-containing precursor and the substrate. This intermediary facilitates rapid metal layer formation while preventing oxygen impurity incorporation, thereby improving both deposition speed and electrical characteristics

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If conventional deposition methods are used, then the process is simpler, but the manufacturing time is excessive due to slow deposition speed

Engineering Contradiction:

Improvedeposition speedVSAvoidmanufacturing time

Core Design Contradiction:

ProductivityVSLoss of time

Solution Approach 1:

By changing the deposition parameters to use MoO2Cl2 precursor with hydrogen halide reducing agents, the patent achieves significantly faster deposition speeds, directly reducing the manufacturing time required to form metal-containing layers in semiconductor devices

Inventive Principle:

Principle #35Parameter changes

3Reliability

If conventional deposition methods are used, then the process can be performed, but oxygen impurities are incorporated into the metal-containing layer affecting electrical characteristics

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidoxygen impurities

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

Hydrogen halide acts as an intermediary reducing agent that prevents oxygen impurity incorporation during deposition. It reacts with oxygen-containing species to form volatile products, thereby eliminating oxygen impurities and improving the electrical characteristics of the metal-containing layer

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent converts the potentially harmful oxygen impurities into beneficial volatile products through the reducing action of hydrogen halide. The oxygen that would normally contaminate the metal layer is transformed into removable species, improving layer purity and electrical characteristics

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly improves the deposition speed of metal-containing layers, reduces manufacturing time, and enhances the electrical characteristics of semiconductor devices by effectively removing oxygen and chloride impurities.

Implementation Method 1

supplying a reducing agent onto the substrate having metal-containing precursors thereon, wherein the supplying of the reducing agent and the supplying of the hydrogen gas are simultaneously or sequentially performed

Methodology Applied

Scientific EffectReduction: Reduction

Implementation Method 2

supplying metal-containing precursors onto the substrate to form a substrate having metal-containing precursors thereon

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

in the supplying of the hydrogen gas and the supplying of the reducing agent, the hydrogen gas and the reducing agent are supplied in a plasma state

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS20250299967A1Method of manufacturing semiconductor device and semiconductor devices produced by such methods

Publication Date: 2025.09.25 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a semiconductor device is provided, which includes preparing a substrate, supplying metal-containing precursors onto the substrate to form a substrate having metal containing precursors thereon, supplying hydrogen gas onto the substrate having metal-containing precursors thereon, and supplying a reducing agent onto the substrate having metal-containing precursors thereon, wherein the supplying of the reducing agent and the supplying of the hydrogen gas are simultaneously or sequentially performed, and wherein the metal-containing precursors include molybdenum dichloride dioxide (MoO2Cl2), and the reducing agent includes a hydrogen halide. Also included are semiconductor devices made by the present methods.