DC Biasing Circuit for MOS Transistor Using Diode Clamping

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Solution Overview

Problem

Conventional DC biasing circuits for MOS transistors face issues with high distortion and noise due to large resistor values required for low high pass corner frequency, leading to significant errors and poor signal-to-noise performance, especially with large input signals and leakage issues.

Innovation Solution

A DC biasing circuit that AC couples an input signal to a MOS transistor's gate, using a pair of diodes in opposing parallel configuration with a bias transistor and current source, and a clamping circuit to limit voltage swing across diodes, allowing for efficient bias voltage generation and high impedance biasing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a large resistor value is used in the RC combination to achieve a low high pass corner frequency, then the corner frequency is reduced, but gate leakage causes significant error in transistor biasing

Engineering Contradiction:
Improvehigh pass corner frequencyVSAvoidtransistor biasing accuracy
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent introduces an operational amplifier as an intermediary component to replace the direct RC coupling. The op-amp actively maintains the bias voltage at the gate, eliminating the need for a large resistor that would be susceptible to leakage currents. This mediator (op-amp) isolates the biasing network from the effects of gate leakage while still achieving the desired low corner frequency response.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces the passive mechanical RC biasing system with an active electronic biasing system using an operational amplifier. This substitution allows for precise control of the bias voltage through active feedback, eliminating the limitations of passive resistor-based biasing where large resistance values are required for low corner frequencies but are vulnerable to leakage.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Device complexity

If active elements like MOS transistor and diode are used to implement the resistor, then the circuit complexity is reduced, but the large input signal swing causes resistance to vary resulting in poor signal to noise ratio and high distortion

Engineering Contradiction:
Improvebiasing circuit structureVSAvoidsignal to noise ratio and distortion
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent employs negative feedback through the operational amplifier to maintain a stable effective resistance despite large input signal swings. The op-amp continuously adjusts the bias voltage to compensate for variations in the MOS transistor's resistance, thereby maintaining consistent signal-to-noise ratio and low distortion across the full input signal range.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent uses dynamic biasing where the operational amplifier actively adjusts the gate bias voltage in response to input signal variations. This dynamic adjustment compensates for the varying resistance of the MOS transistor during large signal swings, maintaining optimal operating conditions throughout the signal cycle rather than relying on a fixed resistance value.

Inventive Principle:
Principle #15Dynamics

3Reliability

If a large resistor is used to set the DC bias, then the bias point is established, but the startup time becomes large

Engineering Contradiction:
ImproveDC bias establishmentVSAvoidstartup time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The operational amplifier is configured with feedback that enables it to quickly establish the correct DC bias voltage at startup. The high gain of the op-amp allows it to rapidly drive the gate to the appropriate bias level without waiting for the slow charging effects that occur with large resistors, thereby significantly reducing startup time while maintaining accurate bias establishment.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS8106706B2DC biasing circuit for a metal oxide semiconductor transistor
Publication Date: 2012.01.31 MICRON SEMICONDUCTOR ASIA OPERATIONS PTE LTD
  • US8106706B2 patent drawing
  • US8106706B2 patent drawing
  • US8106706B2 patent drawing

AI summary

A method for biasing a MOS transistor includes AC coupling an input signal from an amplifier stage to a gate of the MOS transistor. The method includes connecting a pair of diodes in an opposing parallel configuration to a bias transistor and a current source. Further, the method includes generating a DC bias voltage through the bias transistor and the current source. The method also includes clamping the voltage at drain of the bias transistor to a fixed voltage by a clamping circuit. Further, the method includes coupling the DC bias voltage to the gate of the MOS transistor through the pair of diodes.