MOS Capacitor Array for Multi-Band RF Tuning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current wireless devices face challenges in efficiently communicating over multiple frequency bands due to the complexity of multi-band communication, particularly when using carrier aggregation, as existing solutions like multi-throw switches and duplexers result in increased size, cost, and insertion loss.
Innovation Solution
The development of a metal oxide semiconductor (MOS) capacitor structure with a substrate and interconnected sections, forming a variable capacitor array that includes source/drain regions and gates, which are configured to reduce substrate coupling and improve Q-factor performance, allowing for efficient tuning across various frequency bands without the need for multiple duplexers or switches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multi-throw switches and duplexers are used for multi-band communication, then frequency band switching capability is improved, but device size and cost increase
Solution Approach 1:
The patent merges multiple capacitor elements into a single integrated variable capacitor array structure, where multiple capacitors share common substrate regions and interconnect structures. This consolidation eliminates the need for separate multi-throw switches and multiple discrete duplexers, reducing overall device size while maintaining multi-band communication capability through electronic tuning of the capacitor array.
Solution Approach 2:
The variable capacitor array serves multiple functions simultaneously: it provides frequency tuning, impedance matching, and multi-band operation capability that previously required separate components. The single capacitor array structure replaces multiple specialized components (switches, duplexers), achieving multi-functionality that reduces device size and complexity.
2Adaptability or versatility
If multi-throw switches and duplexers are used for multi-band communication, then frequency band switching capability is improved, but insertion loss increases
Solution Approach 1:
The patent replaces mechanical switching components (multi-throw switches) with an electronically controlled variable capacitor array. This substitution eliminates the mechanical contact resistance and switching losses associated with traditional switches, reducing insertion loss while maintaining frequency band switching capability through electronic tuning of capacitor values.
3Adaptability or versatility
If multiple duplexers are used for multi-band communication, then frequency band handling capability is improved, but device complexity and cost increase
Solution Approach 1:
The patent combines the functionality of multiple discrete duplexers into a single integrated variable capacitor array structure. By sharing common substrate regions, interconnect layers, and control mechanisms, the design reduces device complexity while maintaining the ability to handle multiple frequency bands through electronic configuration of the capacitor array.
4Ease of manufacture
If conventional capacitor structures are used, then manufacturing simplicity is maintained, but Q-factor performance and density are insufficient
Solution Approach 1:
The patent segments the capacitor structure into multiple discrete capacitor elements arranged in an array configuration within a shared substrate region. This segmentation allows for optimized electrical characteristics and higher density while maintaining compatibility with standard semiconductor manufacturing processes, achieving both high Q-factor performance and ease of manufacture through modular design.
Data Source
AI summary
A capacitor structure is described. A capacitor structure including a substrate and at least one device formed on the substrate. The device including first and second sections. Each of the first and second sections including a plurality of source/drain regions formed in the substrate and a plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions to form a section channel between each pair of source/drain regions. The plurality of gates of the first and second sections are coupled with each other.