MOS Semiconductor Charged Particle Detection
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Solution Overview
Problem
Conventional detection devices for charged particles from radiopharmaceuticals have low efficiency and specificity, with gamma radiation causing noise and signal losses due to scattering processes within scintillators.
Innovation Solution
A detection device with a radiation sensor comprising metal-oxide-semiconductor (MOS) components and a light sealing covering, which filters out light and uses a collimator to enhance specificity and reduce noise, allowing for direct interaction with charged particles and improved imaging capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a scintillator and photodetector are used to detect charged particles, then detection capability is provided, but efficiency and specificity are low due to gamma radiation noise and scattering processes
Solution Approach 1:
The patent extracts and removes the scintillator component from the detection system, replacing it with a semiconductor detector that directly detects charged particles without converting to light first. This eliminates the scattering processes and gamma radiation noise associated with scintillator materials, thereby improving specificity and reducing harmful factors simultaneously.
Solution Approach 2:
The patent introduces a light sealing covering as an intermediary element between the semiconductor detector and the external environment. This covering prevents light from reaching the detector, eliminating light-induced noise while allowing charged particles to be detected directly, thus improving measurement precision without compromising detection capability.
2Loss of energy
If a scintillator is used to detect charged particles, then detection is enabled, but signal losses occur due to scattering processes within the scintillator
Solution Approach 1:
The patent removes the scintillator and photodetector interface from the system, using a semiconductor detector that directly converts charged particle energy to electrical signals. This eliminates signal losses from light scattering at interfaces and removes the complexity of engineering scintillator-photodetector couplings, simultaneously reducing energy loss and device complexity.
Solution Approach 2:
The patent replaces the optical conversion mechanism (scintillator converting charged particles to light, then photodetector converting light to electrical signals) with a direct electrical detection mechanism using a semiconductor detector. This substitution eliminates multiple conversion steps and interfaces, reducing both signal loss and the engineering complexity required to manage these interfaces.
3Measurement precision
If conventional detection methods are used, then charged particles can be detected, but resolution is reduced due to additional scattering processes of photons within the scintillator
Solution Approach 1:
The patent extracts and removes the scintillator material from the detection path, eliminating the medium through which photons would scatter. By using a semiconductor detector that directly detects charged particles and converts their energy to electrical signals, the system avoids photon scattering entirely, thereby improving resolution while preventing energy loss from scattering processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced specificity and reduced noise, enabling more accurate detection and imaging of charged particles, particularly beta radiation, while minimizing interference from gamma radiation.
Implementation Method 1
A semiconductor of the MOS components is configured for interaction charge carriers to be created in the depletion layer of the semiconductor in response to direct interaction with received charged particles
Implementation Method 2
A light sealing covering is arranged to prevent light from impinging on the pixel array
Data Source
Figure 1A~1B
Figure 1C~1D
Figure 2
AI summary
A detection device is provided, the detection device for detecting radiation from a radiopharmaceutical administered to a subject. The detection device comprises a radiation sensor having a plurality of metal-oxide-semiconductor, MOS, components providing a pixel array, a semiconductor of the MOS components configured for interaction charge carriers to be created in the depletion layer of the semiconductor in response to direct interaction with received charged particles emitted from the radiopharmaceutical. The detection device further comprises a light sealing covering arranged to prevent light from impinging on the pixel array. A laparoscopic probe, a handheld device and a specimen imaging chamber are also disclosed, and methods for operating the detection devices described herein.